Lithography mask and fabrication method thereof
AssigneeLG Semicon Co., Ltd.
InventorYong-Kyoo Choi
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Abstract
A lithography mask and a method for fabricating a mask are disclosed. The method includes the steps of forming a plurality of insulating film patterns on a semiconductor substrate, forming a plurality of doped regions in the semiconductor substrate, forming a conductive layer on the doped regions and the insulating film patterns, and forming a plurality of passages through the semiconductor substrate. The lithography mask includes a semiconductor substrate, a plurality of patterns formed on the semiconductor substrate, a plurality of doped regions formed in the semiconductor substrate between the patterns, a plurality of trenches formed on a lower portion of the semiconductor substrate to expose the doped regions, and a plurality of first holes each penetrating a corresponding one of the doped regions.
Claims32
A method for fabricating a mask, comprising the steps of:
- forming a plurality of film patterns on a semiconductor substrate;
- forming a plurality of doped regions in the semiconductor substrate;
- forming a conductive layer on the doped regions and the film patterns;
- and
- forming a plurality of passages through the semiconductor substrate.
A lithography mask comprising:
- a semiconductor substrate;
- a plurality of patterns formed on the semiconductor substrate;
- a plurality of doped regions formed in the semiconductor substrate between the patterns;
- a plurality of trenches formed on a lower portion of the semiconductor substrate to expose the doped regions;
- and
- a plurality of first holes each penetrating a corresponding one of the doped regions.
Dependencies are inferred from the claim text.