Polishing agent and polishing method using the same

A polishing method, comprising the steps of:

• forming a conductive film made of a material containing a metal as a main component on a substrate having depressed portions on a surface thereof, so as to fill said depressed portions with said conductive film to form a depressed surface of said conductive film;
• and
• chemically and mechanically polishing said conductive film by applying a slurry comprising a polishing agent containing a chemical agent which forms a protective film on the depressed surfaces of said conductive film by reaction with said material containing a metal as a main component in combination with aminoacetic acid or amidosulfuric acid, and hydrogen peroxide, the molar concentration ratio of said chemical agent to aminoacetic acid or amidosulfuric acid in said polishing agent falling within the range of 1/1000 to 3/100.

A polishing method, comprising the steps of:

• forming a conductive film made of a material containing a metal as a main component on a substrate having depressed portions on a surface thereof, so as to fill said depressed portions with said conductive film to form a depressed surface of said conductive film;
• and
• chemically and mechanically polishing said conductive film using a polishing pad attached to a polishing table while applying a slurry comprising a polishing agent containing a chemical agent which forms a protective film on the depressed surfaces of said conductive film by reaction with said material containing a metal as a main component in combination with aminoacetic acid, amidosulfuric acid, or hydrogen peroxide, said polishing being performed while cooling at least one member selected from the group consisting of the polishing pad, the polishing table and the slurry.