Method for manufacturing field emission display device
AssigneeElectronics and Telecommunications Research Institute
InventorsJong-Moon Park, Yeong-Cheol Hyeon, Kee-Soo Nam
Life of this patent
Estimating the term…
Abstract
In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.
Claims6
A method for manufacturing a field emission display device, comprising the steps of:
- sequentially forming a first insulating film and a first conductive film on a substrate and patterning the first conductive film to form a plurality of electron emission cathode lines, each having a predetermined width;
- depositing a second insulating film, a second conductive film and a third insulating film over the whole surface of the substrate, in due order;
- selectively etching the third insulating film, the second conductive film and the second insulating film, to form a gate electrode and a trench through which a predetermined area of the electron emission cathode line is exposed;
- forming a fifth insulating film at the lateral side of the gate electrode;
- forming a blanket of a third conductive film over the resulting structure and selectively etching the third conductive film, to form an electron emission cathode at the sidewall of the trench;
- and
- removing the second insulating film pattern and the fifth insulating film pattern and partially etching the side of the gate insulating film, simultaneously, to spatially separate the gate electrode from the electron emission cathode.
Dependencies are inferred from the claim text.