Active-matrix liquid crystal display and fabrication method thereof

An active-matrix liquid crystal display integrally formed with a driver circuit comprising:

• a pair of substrates disposed in opposing relation to each other;
• and
• a liquid crystal material sandwiched between the pair of substrates;
• wherein the pair of substrates comprises:
• a TFT substrate including at least an insulative substrate, source interconnection lines and gate interconnection lines which are formed in a matrix pattern on the insulative substrate, a thin film transistor, provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material, which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection lines and the gate interconnection lines;
• and
• a counterpart substrate including an insulating substrate and a counter electrode formed thereon;
• wherein the thin film transistor provided to the pixel portion is of a first conductivity type and has an LDD structure,
• a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit, disposed adjacent to the thin film transistor provided to the pixel portion, having the same structure as the structure of the thin film transistor provided to the pixel portion,
• a second conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit having a conventional planar structure, that is non-LDD and non-offset structure,
• wherein a distance L.sub.1 between one end face of a gate electrode of the first conductivity type thin film transistor and an end face of a first LDD region is substantially identical with a distance L.sub.2 between another end face of the gate electrode and an end face of a second LDD region, and
• wherein a length L.sub.7 of the first LDD region is identical to a length L.sub.8 of the second LDD region.

An active-matrix liquid crystal display integrally formed with a driver circuit comprising:

• a pair of substrates disposed in opposing relation to each other;
• and
• a liquid crystal material sandwiched between the pair of substrates;
• wherein the pair of substrates comprises:
• a TFT substrate including at least an insulative substrate, source interconnection lines and gate interconnection lines which are formed in a matrix pattern on the insulative substrate, a thin film transistor, provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material, which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection lines and the gate interconnection lines;
• and
• a counterpart substrate including an insulating substrate and a counter electrode formed thereon;
• wherein the thin film transistor provided to the pixel portion is of a first conductivity type and has an offset structure,
• a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit, being disposed adjacent to the thin film transistor provided to the pixel portion, having the same structure as the structure of the thin film transistor provided to the pixel portion,
• a second conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit having a conventional planar structure, that is a non-offset structure and a non-LDD structure, and
• wherein a gate electrode of the second conductivity type thin film transistor of the CMOS driver circuit is subjected to ion implantation twice and the conductivity type of the gate electrode is an n-type, and
• a length L.sub.5 of a first LDD region is identical to a length L.sub.6 of a second LDD region.

An active-matrix liquid crystal display integrally formed with a driver circuit comprising:

• a pair of substrates disposed in opposing relation to each other;
• and
• a liquid crystal material sandwiched between the pair of substrates;
• wherein the pair of substrates comprises:
• a TFT substrate including at least an insulative substrate, source interconnection lines and gate interconnection lines which are formed in a matrix pattern on the insulative substrate, a thin film transistor, provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material, which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection lines and the gate interconnection lines;
• and
• a counterpart substrate including an insulating substrate and a counter electrode formed thereon;
• wherein the thin film transistor provided to the pixel portion is of a first conductivity type and has an offset structure,
• a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit, disposed adjacent to the thin film transistor provided to the pixel portion, having the same structure as the structure of the thin film transistor provided to the pixel portion,
• a second conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit having a conventional planar structure, that is a non-offset and a non-LDD structure, and
• wherein a gate electrode of the second conductivity type thin film transistor of the CMOS driver circuit is subjected to ion implantation twice, and wherein a length L.sub.7 of LDD region located on a source side in the channel lengthwise direction is substantially identical with a length L.sub.8 of LDD region located on a drain side in the channel lengthwise direction.

An active-matrix liquid crystal display integrally formed with a driver circuit comprising:

• a pair of substrates disposed in opposing relation to each other;
• and
• a liquid crystal material sandwiched between the pair of substrates;
• wherein the pair of substrates comprises:
• a TFT substrate including at least an insulative substrate, source interconnection lines and gate interconnection lines which are formed in a matrix pattern on the insulative substrate, a thin film transistor, provided to each pixel portion for use as a switching element for applying a voltage to a portion of the liquid crystal material, which lies at a location where the source interconnection line and the gate interconnection line intersect each other, a pixel electrode connected to a drain electrode of the thin film transistor for supplying a voltage to the liquid crystal material, and a CMOS driver circuit which comprises thin film transistors for supplying an electric signal to the thin film transistor of the pixel portion through the source interconnection lines and the gate interconnection lines;
• and
• a counterpart substrate including an insulating substrate and a counter electrode formed thereon;
• wherein the thin film transistor provided to the pixel portion is of a first conductivity type and has an LDD structure,
• a first conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit, disposed adjacent to the thin film transistor provided to the pixel portion, having the same structure as the structure of the thin film transistor provided to the pixel portion,
• a second conductivity type thin film transistor of the thin film transistors of the CMOS driver circuit having a conventional planar structure, that is a non-offset and a non-LDD structure,
• wherein a length L.sub.7 of a LDD region located on a source side in the channel lengthwise direction is substantially identical with a length L.sub.8 of the LDD region located on a drain side in the channel lengthwise direction.