Gallium nitride-based III-V group compound semiconductor
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
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Abstract
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Claims37
A gallium nitride-based III-V group compound semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V group compound semiconductor layer, and a p-type gallium nitride-based III-V group, compound semiconductor layer said p-type semiconductor layer containing hydrogen;
- a first electrode provided in electrical contact with said n-type semiconductor layer;
- and
- a second electrode provided over, and in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer by expelling of said hydrogen in said p-type semiconductor layer therethrough.
A gallium nitride-based II-V Group compound semiconductor device, comprising a p-type gallium nitride based Ill-V Group compound semiconductor layer containing hydrogen, and an electrode provided over, and in electrical contact with said p-type semiconductor layer and comprising a metallic material, said electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer therethrough, by expelling said hydrogen in said p-type semiconductor layer.
A gallium nitride-based III-V Group compound semiconductor device, comprising:
- a substrate having first and second major surfaces;
- a semiconductor stacked structure arranged over said first major surface of the substrate, and comprising an n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor layer;
- a first electrode provided in electrical contact with said n-type semiconductor layer;
- a second electrode provided in electrical contact with said p-type semiconductor layer, and comprising a metallic material, said second electrode being light-transmissive, and establishing an ohmic contact with said p-type semiconductor layer;
- and
- a transparent protective layer comprising an electrically insulative material and covering said second electrode.
Dependencies are inferred from the claim text.