Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation

A method of forming an integrated circuit, comprising the steps of:

• providing a semiconductor substrate having a principal surface;
• forming a plurality of semiconductor devices in the substrate;
• forming a plurality of trenches in the substrate extending from the principal surface thereof into the substrate to a particular depth;
• forming a layer of insulating material in each of the trenches;
• forming a first pattern of conductive lines overlying the principal surface and in electrical contact with the devices;
• forming an electrically insulating film layer overlying the substrate;
• permanently bonding a thermal conductive plate to the insulating film layer and overlying the principal surface of the substrate;
• removing a portion of the substrate from a backside surface thereof opposing the principal surface, thereby exposing at least a bottom part of each of the trenches;
• forming a second pattern of conductive lines on a surface of the plate prior to the step of bonding;
• and
• electrically contacting portions of the second pattern to portions of the first pattern.

An integrated circuit comprising:

• a semiconductor substrate having a principal surface;
• a plurality of semiconductor devices formed in the substrate;
• a pattern of conductive lines formed overlying the principal surface and in electrical contact with the devices;
• an electrically insulating film at least partially overlying the pattern of conductive lines;
• a thermally conductive plate bonded to the insulating film and overlying the pattern of conductive lines and overlying the plurality of semiconductor devices, the plate being insulated from the pattern of conductive lines by the insulating film, wherein the plate provides mechanical support for the substrate and the pattern of conductive lines, and whereby the plate is a part of the completed integrated circuit;
• a plurality of trenches each filled with dielectric material and extending from the principal surface of the substrate through the substrate and to an opposing backside surface thereof, wherein the trenches dielectrically isolate the semiconductor devices from one another;
• a plurality of through holes defined in the plate;
• and
• a plurality of electrical contacts, one electrical contact extending through each of the through holes and being in electrical contact with one of the semiconductor devices.

A method of forming an integrated circuit, comprising the steps of:

• providing a semiconductor substrate having a principal surface;
• forming a plurality of semiconductor devices in the substrate;
• forming a plurality of trenches in the substrate extending from the principal surface thereof into the substrate to a particular depth;
• filling each of the trenches with dielectric material wherein the trenches dielectrically isolate the semiconductor devices from one another;
• forming a pattern of conductive lines overlying the principal surface and in electrical contact with the devices;
• forming an electrically insulating film layer overlying the substrate;
• bonding a thermal conductive plate to the insulating film layer and overlying the principal surface of the substrate and overlying the plurality of semiconductor devices, the plate being insulated from the pattern of conductive lines by the insulating film layer, wherein the plate provides mechanical support for the substrate and the pattern of conductive lines, and whereby the plate is part of the completed integrated circuit;
• removing a portion of the substrate from a backside surface thereof opposing the principal surface, thereby exposing at least a bottom part of each of the trenches and reducing a thickness of the substrate;
• forming a second pattern of conductive lines on a surface of the plate prior to the step of bonding;
• and
• electrically contacting portions of the second pattern to portions of the first pattern.