Process for producing semiconductor components between which contact is made vertically

A process for producing semiconductor components between which electrically conductive contact is made vertically, comprising the steps of:

• in a first step, producing a first semiconductor component including the substeps of:
• in a first substep, producing a contact location on a substrate having a layer structure on one side, said contact location being selected from a group consisting of:
• a contact layer of semiconductor material and with which contact is to be made, and a metal contact and an interconnect;
• in a second substep, using a mask while etching a vertical recess into said substrate, starting from the one side provided with said layer structure, to a depth which is sufficient for s subsequent fourth step;
• in a third substep, depositing a metal into said vertical recess and into said contact location so that a portion of said metal which is introduced into said vertical recess is electrically conductively connected to that portion of said metal which is applied to said contact location, and
• in a fourth substep, removing a second side of the substrate which is opposite the one side until the metal in the vertical recess projects beyond said second side of the substrate and producing a second semiconductor component which is to make vertical contact with said first semiconductor component and has a layer structure having a contact location with which contact is to be made, said contact location being selected from a group consisting of a contact layer of semiconductor material and a metal contact and an interconnect,
• in a second step, using a mask to apply a metallization layer made of a metal having a lower melting point than that of an interconnect to said contact location as a region provided for making contact with the first semiconductor component,
• in a third step, arranging said first and second semiconductor components above one another in such a way that the metal projecting out of the vertical recess in the substrate of the first semiconductor component is situated above the region, provided for contact-making, of said metallization layer of the second semiconductor component, and
• in a fourth step, producing a permanent electrically conductive contact with the metal of the first semiconductor component by heating said metallization layer.