Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates
AssigneeRobert Bosch GmbH
InventorsHerbert Goebel, Vesna Goebel
Life of this patent
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Abstract
In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.
Claims3
A method for manufacturing a semiconductor arrangement, comprising the steps of:
- coating a surface of a semiconductor substrate using at least one dopant element to provide a first layer having a first dopant type, the semiconductor substrate having edge areas;
- providing crystal disorder structures into the first layer at the edge areas, the edge areas having damaged regions and undamaged regions;
- diffusing a second layer having a second dopant type into the first layer to form a p-n junction between the first layer and the second layer, the second layer being diffused in the damaged regions more rapidly than in the undamaged regions;
- and
- dicing the semiconductor substrate at the edge areas of the semiconductor substrate.
Dependencies are inferred from the claim text.