Loading patent…
AssigneeNEC Corporation
InventorsJun-Ichi Fujikata, Kazuhiko Hayashi, Hidefumi Yamamoto, Kunihiko Ishihara, Masafumi Nakada
Estimating the term…
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc.sub.2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.
A magnetoresistance effect film comprising two ferromagnetic layers stacked on a substrate with a nonmagnetic layer interposed between said two ferromagnetic layers, and an antiferromagnetic layer underlying a first one of said ferromagnetic layers, the inequality of Hc.sub.2 <Hr being satisfied between a biasing magnetic field Hr of said antiferromagnetic layer and a coercive force Hc.sub.2 of the other second one of said ferromagnetic layers, wherein at least a part of said antiferromagnetic layer is made of a NiMn alloy having an fct crystalline structure, said NiMn alloy having 1-10% carbon (C) by the atomic percent added thereto to induce fct lattice transformation during heat treatment.
Dependencies are inferred from the claim text.