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US 5,763,325 AGranted
Fabrication process of a semiconductor device using a slurry containing manganese oxide
AssigneeFujitsu Limited
InventorsSadahiro Kishii, Akiyoshi Hatada, Rintaro Suzuki, Hiroshi Horie, Yoshihiro Arimoto, Ko Nakamura
Life of this patent
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Abstract
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
Claims12
A polishing method for polishing an object, comprising a step of:
- polishing said object by a slurry,
- said slurry containing abrasive particles of MnO.sub.2, a solvent in which said abrasive particles are dispersed, and an additive added to said solvent,
- said additive being selected from a group consisting of a potassium phthalate, an ammonium phthalate, a phthalic acid, a benzoic acid, an anthranilate, an anthranilic acid, a lactic acid and a lactose.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a non-insulator layer on an insulator layer;
- and
- polishing said non-insulator layer until said insulator layer is exposed,
- said step of polishing being conducted by a slurry
- said slurry including abrasive particles of MnO.sub.2, a solvent in which said abrasive particles are dispersed, and an additive added to said solvent,
- said solvent being selected from a group consisting of a potassium phthalate, an ammonium phthalate, a phthalic acid, a benzoic acid, an anthranilate, an anthranilic acid, a lactic acid, and a lactose.
3 more elements
A method of fabricating a semiconductor device, comprising the steps of:
- forming a nitride film of a refractory element on a first layer;
- forming a second layer on said nitride film;
- and
- polishing said second layer by a slurry containing abrasive particles consisting essentially of MnO.sub.2, while using said nitride film as a polishing stopper.
1 more element
A method of fabricating a semiconductor device, comprising:
- a step of polishing an insulation film containing Si and O,
- said step of polishing being carried out by a slurry consisting essentially of MnO.sub.2 particles as abrasive particles.
Dependencies are inferred from the claim text.