Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility

A plasma ion implantation method for creating a doped region in a semiconductor device where the semiconductor is formed on a substrate of a selected material, comprising the steps of:

• a) providing a substrate of a selected material;
• b) selecting one or more source materials for composing an ion compound including one or more atoms of a dopant element and one or more atoms of one or more complementary elements, the dopant element and the complementary elements each having a solid solubility limit in said substrate material, where in the one or more complementary elements are one or more different elements selected from the group of elements consisting of silicone, germanium, tin, and lead;
• c) introducing the selected source materials in a gaseous state into a plasma generating chamber to create the ion compound;
• d) ionizing the ion compound;
• e) implanting the ion compound into the substrate to form a doped region, where the atomic concentration level for each of the dopant element and the complementary elements in the substrate does not exceed the corresponding solid solubility limit of the respective element in the substrate material.