Semiconductor pressure sensor that suppresses non-linear temperature characteristics

Abstract

A semiconductor pressure sensor includes a diaphragm of an octagonal shape formed on a (110) silicon substrate by anisotropic etching. When a distance between two sides of the diaphragm, which are defined by intersecting lines of a (110) face and a (111) face of the silicon substrate, is represented as L1 and a length of a side of the diaphragm, which is defined by an intersecting line of the (110) face and a (100) face, is represented as L2, the diaphragm is formed so as to satisfy the following relationship: 0.65<L2/L1<1. As a result, it is possible to eliminate substantially a non-linear component of the temperature characteristics of an offset voltage generated by the pressure sensor.

Dependencies are inferred from the claim text.