Composition for oxide CMP
AssigneeCabot Corporation
InventorsGautam S. Grover, Brian L. Mueller
Life of this patent
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Abstract
A chemical mechanical polishing composition comprising carboxylic acid, a salt and a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.
Claims35
An aqueous chemical mechanical polishing composition comprising:
- a salt;
- soluble cerium;
- and
- a carboxylic acid, wherein the composition has a pH of from about 3 to about 11.
A chemical mechanical polishing slurry comprising:
- a salt;
- soluble cerium;
- a carboxylic acid;
- and
- an abrasive, wherein the composition has a pH of from about 3 to about 11.
A chemical mechanical polishing slurry comprising from about 2 to about 15 weight percent metal oxide abrasive, from about 0.5 to about 10 weight percent nitrate salt, from about 0.5 to about 10 weight percent carboxylic acid and from about 0.5 to about 10 percent soluble cerium, wherein the slurry has a pH of from about 3 to about 11.
A method for removing at least a portion of a silicon dioxide layer from a substrate comprising:
- mixing a salt, a soluble cerium compound, a carboxylic acid, and de-ionized water to form a chemical mechanical polishing composition having a pH of from about 3.0 to about 11.0;
- applying the chemical mechanical polishing composition to the substrate;
- and
- removing at least a portion of the silicon dioxide layer from the substrate by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
A method for removing at least a portion of a silicon dioxide layer from a silicon wafer, said silicon wafer including a silicon nitride layer, said method comprising:
- mixing from about 2 to about 15 weight percent silica, from about 0.1 to about 4.0 weight percent ammonium cerium nitrate, from about 0.1 to about 3.0 weight percent of acetic acid and de-ionized water to form a chemical mechanical polishing slurry having a pH of between about 3.8 to about 5.5;
- applying the chemical mechanical polishing slurry to a pad;
- rotating the pad;
- and
- removing at least a portion of the silicon dioxide layer by bringing the rotating pad into contact with the wafer and rotating the wafer in relation to the rotating pad.
Dependencies are inferred from the claim text.