Integrated silicon pin diode electro-optic waveguide
AssigneeBookham Technology PLC
InventorsStephen James Crampton, Arnold Peter Roscoe Harpin, Andrew George Rickman
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Abstract
The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.
Claims16
An electro-optic device comprising:
- a layer of silicon separated from a substrate by a layer of insulating material with a rib comprising an upper surface and two side surfaces formed in the layer of silicon to provide a rib waveguide for the transmission of optical signals and means for controlling the density of free charge carriers in the rib waveguide so as to alter the effective refractive index of the rib waveguide, characterised in that said control means is in the form of a lateral doped junction comprising a p-doped region and an n-doped region on opposite sides of the rib to form a pin diode arranged such that an electrical signal can be applied laterally across the junction so as to inject free charge carriers into the rib waveguide and in that the dimensions of the rib waveguide forming the optical waveguide are large enough to be compatible with fibre optics.
Dependencies are inferred from the claim text.