Image forming member for electrophotography
AssigneeCanon Kabushiki Kaisha
InventorsToshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Tadaji Fukuda
Life of this patent
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Abstract
An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
Claims16
An amorphous p-type semiconductor matrix formed by the process comprising:
- (a) depositing on a support a matrix of amorphous hydrogenated silicon containing at least one chemical modifier, said chemical modifier being nitrogen in an amount from 0.1 to 30 atomic percent;
- and
- (b) simultaneously incorporating a p-type doping impurity in said matrix by gradually changing a rate of addition of said p-type impurity during step (a) to incorporate said p-type impurity in a non-uniform distribution in a gradual decreasing concentration from a support side to a free surface side within a range from 10.sup.15 to 10.sup.19 cm.sup.-3 to form a region which acts as a depletion region in order to provide improved electrical properties and acts as a barrier layer in order to inhibit injection of carriers from the support side.
An amorphous p-type semiconductor matrix formed by the process comprising:
- (a) depositing on a support a matrix of amorphous hydrogenated silicon containing at least one chemical modifier, said chemical modifier being nitrogen in an amount from 0.1 to 30 atomic %;
- and
- (b) simultaneously incorporating a p-type doping impurity in said matrix by changing a rate of addition of said p-type impurity during step (a) to incorporate said p-type impurity in a higher amount at a support side and a lower amount at a free surface side within a range from 10.sup.15 to 10.sup.19 cm.sup.-3 to form a region which acts as a depletion region in order to provide improved electrical properties and acts as a barrier layer in order to inhibit injection of carriers from the support side.
A semiconductor device formed by the process comprising:
- (a) depositing on a support a photosensitive amorphous material comprising silicon as a matrix, hydrogen atoms and at least one element selected from the group consisting of oxygen, carbon and nitrogen;
- and
- (b) simultaneously incorporating an impurity for controlling conductive type in said photosensitive amorphous material by gradually changing a rate of addition of said impurity during step (a) to form on the support, in order, a first region containing a higher amount of said impurity and a second region containing a lower amount of said impurity to form a region which acts as a depletion region in order to provide improved electrical properties and acts as a barrier layer in order to inhibit injection of carriers from the support side.
An electrophotographic image forming member produced by process comprising the steps of:
- (a) providing a support in a film formation space;
- (b) introducing into the space (i) a silane gas as a starting material gas, (ii) a starting material gas being a gas at room temperature containing at least one element selected from the group consisting of oxygen, carbon and nitrogen as a constituent element, and (iii) an impurity gas for controlling conductive type;
- (c) generating a glow discharge;
- and
- (d) reducing an amount of the impurity gas introduced into the space during the generation of the glow discharge, thereby forming on the support an amorphous material having sufficient photosensitivity and dark resistance for electrophotography comprising silicon atom as a matrix, 0.1 to 30 atomic percent of at least one element selected from the group consisting of oxygen, carbon and nitrogen, 1 to 40 atomic percent of hydrogen atom and an impurity for controlling conductive type, wherein the impurity is distributed non-uniformly in the layer thickness direction in a larger amount at a support side and a smaller amount at a free surface side to form a region which acts as a depletion region in order to provide improved electrical properties and acts as a barrier layer in order to inhibit injection of carriers from the support side.
A light-receiving member comprising a layer of hydrogenated amorphous silicon provided on a support, said layer comprising silicon atoms as a matrix, boron atoms, hydrogen atoms and 1 to 30 atomic percent of at least one element selected from the group consisting of oxygen, carbon and nitrogen atom, wherein the layer comprises a first region containing a higher amount of boron at a support side and a second region containing a lower amount of boron than said first region to form a region which acts as a depletion region in order to provide improved electrical properties and acts as a barrier layer in order to inhibit injection of carriers from the support side.
Dependencies are inferred from the claim text.