Optical semiconductor device

Abstract

Disclosed is an optical semiconductor device includes a multiquantum well structure comprising a well layer and a barrier layer, wherein: the well layer is made of InGaAsP, InGaAs or InGaP; the barrier layer is made of InGaAlAsP, InGaAlAs or InGaAlP; and optionally the well layer has the same In/Ga ratio as the barrier layer and the well layer is compressively strained. Also disclosed is a vapor-phase growth method of a multiquantum well structure comprises a well layer and a barrier layer or further comprises an intermediate layer between the well layer and the barrier layer, comprising the steps of: continuously supplying at a constant flow rate one or several V group gases and one or several first III group gases during the growth of the multiquantum well; forming the well and barrier layer by interrupting the supply of a second III group gas different from the first III group gas; and forming the intermediate layer by varying a flow rate of the second III group gas.

Dependencies are inferred from the claim text.