Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films
AssigneeNorthwestern University
InventorsBruce W. Wessels, Michael J. Nystrom
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Abstract
Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6, where x is greater than 0.25 and less than 0.75, and KNbO.sub.3 ferroelectric thin films metalorganic chemical vapor deposited on amorphous or crystalline substrate surfaces to provide a crystal axis of the film exhibiting a high dielectric susceptibility, electro-optic coefficient, and/or nonlinear optic coefficient oriented preferentially in a direction relative to a crystalline or amorphous substrate surface. Such films can be used in electronic, electro-optic, and frequency doubling components.
Claims14
A method of forming a KNbO.sub.3 thin film on a substrate surface, comprising depositing said film on the substrate surface in a reactor by metalorganic chemical vapor deposition using a potassium-bearing metalorganic reactant in excess of stoichiometric, a niobium-bearing metalorganic reactant, and oxygen reactant under temperature and pressure conditions that said film is single phase with a preferential crystal orientation relative to the substrate surface.
A method of forming a KNbO.sub.3 thin film on a substrate surface, comprising depositing said film on the substrate surface in a reactor by metalorganic chemical vapor deposition using a potassium-bearing metalorganic oxide reactant, niobium-bearing metalorganic oxide reactant, and oxygen reactant under temperature and pressure conditions that said film is single phase with a preferential crystal orientation relative to the substrate surface.
A method of forming a Sr.sub.x Ba.sub.1-x Nb.sub.2 O.sub.6 thin film, where x is greater than 0.25 and less than 0.75, on an amorphous substrate surface, comprising depositing said film on the amorphous substrate surface in a reactor by metalorganic chemical vapor deposition under conditions that said film includes a preferential crystal orientation relative to the amorphous substrate surface.
A method of forming a KNbO.sub.3 thin film on a substrate surface, comprising depositing said film on the substrate surface in a reactor by metalorganic chemical vapor deposition using a potassium-bearing metalorganic reactant comprising potassium tert-butoxide in excess of stoichiometric, a niobium-bearing metalorganic reactant, and oxygen reactant under conditions that said film includes a preferential crystal orientation relative to the substrate surface.
A method of forming a KNbO.sub.3 thin film on a substrate surface, comprising depositing said film on the substrate surface in a reactor by metalorganic chemical vapor deposition using a potassium-bearing metalorganic oxide reactant comprising potassium tert-butoxide, niobium-bearing metalorganic oxide reactant, and oxygen reactant under conditions that said film includes a preferential crystal orientation relative to the substrate surface.
Dependencies are inferred from the claim text.