VCSEL with integrated MSM photodetector
AssigneeMotorola, Inc.
InventorsWenbin Jiang, Chan-Long Shieh, Michael S. Lebby
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Abstract
A VCSEL (113) having a first and a second stack of distributed Bragg reflectors (120, 116) and an active region (118) defining a light generating and emitting path. A layer (104) of semiconductor material is formed on the second stack (116) so as to intersect the light path and a first electrode (106) and a second electrode (108) are disposed on the layer (104) to form a metal-semiconductor-metal photodetector (102). The metal-semiconductor-metal photodetector (102) absorbs some of the light emitted by the VCSEL (113) and provides an indication of the light output intensity, which indication may be used to control the VCSEL (113).
Claims14
A vertical cavity surface emitting laser with an integrated metal-semiconductor-metal photodetector comprising:
- a vertical cavity surface emitting laser having a substrate with a first surface, a first stack of distributed Bragg reflectors disposed on the first surface of the substrate, an active area disposed on the first stack of distributed Bragg reflectors, a second stack of distributed Bragg reflectors disposed on the active area so as to define an optical pathway through which light is generated and passes, the vertical cavity surface emitting laser further including first and second electrical contacts coupled to the first and second stacks respectively for supplying operating power thereto;
- a layer of semiconductor material disposed on the second stack of distributed Bragg reflectors so as to intersect the optical pathway;
- and
- first and second spaced apart electrodes disposed on the layer of semiconductor material so as to define a metal-semiconductor-metal photodetector in cooperation with the layer of semiconductor material.
A vertical cavity surface emitting laser with an integrated metal-semiconductor-metal photodetector comprising:
- a vertical cavity surface emitting laser having a substrate with a first surface, a first stack of distributed Bragg reflectors disposed on the first surface of the substrate, an active area disposed on the first stack of distributed Bragg reflectors, a second stack of distributed Bragg reflectors disposed on the active area so as to define an optical pathway through which light is generated and passes, the vertical cavity surface emitting laser further including first and second electrical contacts coupled to the first and second stacks respectively for supplying operating power thereto;
- a layer of amorphous silicon disposed on the second stack of distributed Bragg reflectors so as to intersect the optical pathway;
- and
- first and second spaced apart electrodes of indium-tin-oxide disposed on the layer of amorphous silicon so as to define a metal-semiconductor-metal photodetector in cooperation with the layer of amorphous silicon.
Dependencies are inferred from the claim text.