Process for transferring microminiature patterns using spin-on glass resist media
AssigneePark Scientific Instruments
InventorSun Woo Park
Life of this patent
Estimating the term…
Abstract
A process is provided for altering the susceptibility of a portion of a Spin-On Glass layer to etching. The process includes taking a substrate including a layer of positive or negative resist Spin-On Glass and exposing a portion of the Spin-On Glass layer to an electric field or an electron beam. Depending on the particular Spin-On Glass used, exposure of a portion of the Spin-On Glass layer to the electric field or electron beam causes the exposed portion to have either significantly enhanced or reduced susceptibility to etching as compared to the unexposed portion. This enables the exposed and unexposed portions to be differentiated by selectively removing the more etch susceptible portions of the Spin-On Glass layer during development.
Claims54
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a layer of positive resist Spin-On Glass;
- and
- exposing a portion of the positive resist Spin-On Glass layer to an electric field or electron beam to increase the susceptibility of the exposed portion of the positive resist Spin-On Glass layer to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a layer of negative resist Spin-On Glass which includes silicon bonded to a heteroatom selected from the group consisting of phosphorus, sulfur, boron and selenium;
- and
- exposing a portion of the negative resist Spin-On Glass layer to an electric field or electron beam to decrease the susceptibility of the exposed portion of the negative resist Spin-On Glass to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a conductive layer and a layer of positive resist Spin-On Glass positioned on top of the conductive layer;
- positioning an electric field or electron beam source in proximity with the positive resist Spin-On Glass layer such that the positive resist Spin-On Glass layer is positioned between the electric field or electron beam source and the conductive layer;
- and
- exposing a portion of the positive resist Spin-On Glass layer to an electric field or electron beam to alter the susceptibility of the portion of the positive resist Spin-On Glass layer to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- forming a first Spin-On Glass layer on top of the substrate;
- forming a conductive layer on top of the first Spin-On Glass layer;
- forming a second Spin-On Glass layer on top of the conductive layer;
- and
- exposing a portion of the second Spin-On Glass layer to an electric field or an electron beam to alter the susceptibility of the portion of the second Spin-On Glass layer to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a conductive layer and a layer of negative resist Spin-On Glass which includes silicon bonded to a heteroatom selected from the group consisting of phosphorus sulfur, boron and selenium positioned on top of the conductive layer;
- positioning an electric field or electron beam source in proximity with the negative resist Spin-On Glass layer such that the negative resist Spin-On Glass layer is positioned between the electric field or electron beam source and the conductive layer;
- and
- exposing a portion of the negative resist Spin-On Glass layer to an electric field or electron beam to alter the susceptibility of the portion of the negative resist Spin-On Glass layer to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a layer of negative resist Spin-On Glass which includes silicon bonded to a heteroatom selected from the group consisting of phosphorus, sulfur, boron and selenium;
- projecting a field emission onto a portion of the negative resist Spin-On Glass layer to alter the susceptibility of the portion of the negative resist Spin-On Glass layer to etching.
A process for altering a susceptibility of a portion of a Spin-On Glass layer to etching comprising:
- taking a substrate including a layer of positive resist Spin-On Glass;
- projecting a field emission onto a portion of the positive resist Spin-On Glass layer to alter the susceptibility of the portion of the positive resist Spin-On Glass layer to etching.
Dependencies are inferred from the claim text.