Method of growing gallium nitride on a spinel substrate

A method of growing gallium nitride on a substrate comprising the steps of:

• providing a magnesium aluminum oxide supporting substrate having a surface;
• disposing a first buffer layer on the surface of the magnesium aluminum oxide supporting substrate;
• disposing a second buffer layer on the first buffer layer, forming the second buffer layer to include a plurality of layers and disposing the plurality of layers adjacent the first buffer layer;
• disposing a third buffer layer on the second buffer layer;
• disposing a fourth buffer layer on the third buffer layer;
• and
• fabricating one of a photonic device structure, an electronic device structure, and an optical waveguide structure on the fourth buffer layer.

A method of growing gallium nitride on a substrate comprising the steps of:

• providing a magnesium aluminum oxide supporting substrate having a surface;
• disposing a first buffer layer on the surface of the magnesium aluminum oxide supporting substrate, the first buffer layer including an aluminum oxynitride material;
• disposing a second buffer layer on the first buffer layer, forming the second buffer layer to include a plurality of layers of graded aluminum oxynitride and disposing the plurality of layers of graded aluminum oxynitride adjacent the aluminum oxynitride material of the first buffer layer;
• disposing a third buffer layer on the second buffer layer, the third buffer layer including an aluminum nitride material;
• disposing a fourth buffer layer on the third buffer layer, the fourth buffer layer including a gallium nitride material;
• and
• fabricating one of a photonic device structure, an electronic device structure, and an optical waveguide structure on the gallium nitride material of the fourth buffer layer.