Method for reducing photolithographic steps in a semiconductor interconnect process

A method for connecting a first layer and a second layer of a semiconductor wafer, the second layer being above the first layer for at least a portion of the first layer and at least a portion of the second layer, the second layer comprising a conductive material, the method comprising the steps of:

• applying a layer of photoresist onto an insulating layer of a semiconductor wafer, the semiconductor wafer comprising a first layer and the insulating layer, the insulating layer covering the first layer;
• exposing a first area of the photoresist layer to light having a first dosage while concurrently exposing a second area adjacent the first area to light having a second dosage differing from the first dosage;
• concurrently developing the first area and second area of the photoresist layer to remove photoresist within the first area to one depth so as to define a first opening in the photoresist layer and to remove all the photoresist within the second area so as to define a second opening in the photoresist layer exposing a portion of the insulating layer;
• etching the exposed insulating layer to extend the second opening into the insulating layer;
• and
• depositing a conductive material into the extended second opening.

A method for forming a contact and upper conductive layer coupled to a first layer of a semiconductor wafer, the upper conductive layer being above the first layer for at least a portion of the first layer and at least a portion of the upper conductive layer, the method comprising the steps of:

• applying a layer of photoresist onto an insulating layer of a semiconductor wafer, the semiconductor wafer comprising a first layer and the insulating layer, the insulating layer covering the first layer;
• exposing a first area of the photoresist layer to light having a first dosage while concurrently exposing a second area adjacent the first area to light having a second dosage differing from the first dosage;
• concurrently developing the first area and second area of the photoresist layer to remove photoresist within the first area to one depth so as to define a first opening in the photoresist layer and to remove all the photoresist within the second area so as to define a second opening in the photoresist layer exposing a portion of the insulating layer;
• etching the exposed insulating layer to extend the second opening into the insulating layer;
• and
• depositing a conductive material into the extended second opening, wherein the deposited conductive material defines the contact and the upper conductive layer.