Thin film transistor having offset region

A semiconductor device comprising:

• a semiconductor region formed over an insulating substrate;
• impurity regions formed in said semiconductor region;
• a gate insulating film formed on said semiconductor region;
• a gate electrode formed on said gate insulating film;
• and
• an anodic oxide film formed on a surface of said gate electrode;
• wherein one of said impurity regions is spaced apart from said gate electrode and said anodic oxide film;
• and
• the other of said impurity regions is overlapped with said gate electrode and said anodic oxide film, and
• wherein edges of the impurity regions are substantially vertically provided.

A semiconductor device comprising;

• a semiconductor region formed over an insulating substrate;
• a pair of impurity regions and a channel region formed in said semiconductor region;
• a gate insulating film on said semiconductor region;
• a gate electrode formed on said gate insulating film;
• and
• an anodic oxide film formed on a surface of said gate electrode;
• wherein a boundary between one of said impurity regions and said channel region is located below said gate electrode while a boundary between the other one of said impurity regions and said channel region is outwardly offset from said gate electrode.

A semiconductor device comprising;

• a semiconductor region formed over an insulating substrate;
• a pair of impurity regions formed in said semiconductor region;
• a gate insulating film formed on said semiconductor region;
• a gate electrode formed on said gate insulating film;
• a gate line formed adjacent to said gate electrode, said gate line being formed on said insulating film and over one of said impurity regions;
• a first anodic oxide film formed on a surface of said gate line;
• and
• a pixel electrode formed over said gate line;
• wherein a first capacitor is constituted of said one impurity region, said gate insulating film and said gate line;
• and
• a second capacitor is constituted of at least said gate line, said first anodic oxide and said pixel electrode,
• wherein both of said impurity regions are spaced apart from said gate electrode.

A semiconductor device comprising:

• a semiconductor region formed over an insulating substrate;
• source and drain regions formed in the semiconductor region, said source and drain regions being introduced with impurities;
• a channel region provided between the source and drain regions;
• a gate insulating film formed on the semiconductor region;
• and
• a gate electrode formed on the gate insulating film,
• wherein a boundary between the source and the channel regions is located below said gate electrode while a boundary between the channel and the drain regions is outwardly offset from said gate electrode.

A semiconductor device comprising;

• a semiconductor region formed over an insulating substrate;
• a pair of impurity regions formed in the semiconductor region;
• a channel region provided between the pair of impurity regions;
• a gate insulating film on the semiconductor region;
• and
• a gate electrode formed on the gate insulating film;
• wherein a boundary between one of the impurity regions and the channel region is located below said gate electrode while a boundary between the other one of the impurity regions and the channel region is outwardly offset from said gate electrode.