Radiation detector
AssigneeRados Technology Oy
InventorJukka Kahilainen
Life of this patent
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Abstract
A method for detecting ionizing radiation by allowing the radiation to affect the surface of the floating gate of a MOSFET transistor through an air or gas space. For this purpose, an uncovered area is formed on the surface of the floating gate of the MOSFET transistor forming the detector. The MOSFET transistor is used so that a charge is formed on its floating gate, the charge changing as a result of the ionizing radiation the transistor is exposed to. The radiation dose is determined by the change which takes place in the charge on the gate.
Claims15
A method for detecting ionizing radiation comprising:
- providing a MOSFET transistor which includes a floating gate having an electrically non-insulated surface,
- arranging said electrically non-insulated surface of said MOSFET transistor in a space containing air or gas,
- forming a desired charge on said floating gate of said MOSFET transistor,
- exposing the air or gas space to ionizing radiation whereby the charge on said floating gate is changed,
- determining the change in the charge of the floating gate,
- and determining the radiation dose based on the change in the charge on the floating gate.
A dosimeter comprising a MOSFET transistor, said transistor comprising:
- a silicon substrate 18;
- a source 11 and a drain 12 provided on the substrate 18;
- an oxide layer 14 provided on the substrate 18 and covering at least a portion of the source 11 and the drain 12;
- a floating gate 13 provided in the oxide layer 14, said oxide layer being open at a top thereof such that at least a portion of the surface of the floating gate 13 is electrically non-insulated and is surrounded by the oxide layer 14.
Dependencies are inferred from the claim text.