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AssigneeRamot University Authority for Applied Research and Industrial Development Ltd.
InventorsGerman Ashkinazi, Mark Leibovich, Boris Meyler, Menachem Nathan, Leonid Zolotarevski, Olga Zolotarevski
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A method of simultaneously forming a gallium arsenide p-i-n structure having p, i, and n regions, which includes heating to dissolve gallium arsenide in a solvent such as bismuth or gallium to form a saturated solution of gallium arsenide in the solvent, contacting the solution with a gaseous mixture, which mixture includes hydrogen, water vapor and products of reactions between the hydrogen and the water vapor with the solvent and with silicon dioxide, to form a contacted solution, coating a suitably selected substrate, such as a group III-V compound such as gallium arsenide, with the contacted solution, cooling the coated substrate to precipitate gallium arsenide from the contacted solution onto the substrate, and removing the substrate coated with a layer of gallium arsenide having a p-i-n structure which constitutes the product having an i region dopant concentration of less than about 10.sup.12 cm.sup.-3.
A method of simultaneously forming a gallium arsenide p-i-n structure having p, i and n regions in one epitaxial layer of GaAs, comprising:
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