Process for forming both fixed and variable patterns on a single photoresist resin mask

Abstract

This invention is embodied in several variations of a process for independently forming both fixed and variable patterns within a single photoresist resin layer. In one application of the invention, both a fixed global alignment mark pattern and a variable identification mark pattern are formed in a single photoresist resin layer, and both patterns are transferred to an underlying substrate with a single etch step. Each pattern is formed independently of the other; the global alignment mark pattern by exposing the photoresist resin on a stepper device, and the identification mark pattern by either exposing or ablating the photoresist resin with a computer-controlled laser beam. Although this invention is described in the context of placing marks on a semiconductor wafer, the method is also applicable to other types of marks on other types of substrates.

Dependencies are inferred from the claim text.