Programming flash memory using predictive learning methods
AssigneeIntel Corporation
InventorsAlbert Fazio, Gregory E. Atwood, James O. Mi, Paul Ruby
Life of this patent
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Abstract
A method for programming a memory cell having more than two possible states to a desired state. The method includes applying a programming pulse to the memory cell. The change in the amount of charge stored by the memory cell caused by applying the programming pulse to the memory cell is sensed. The control engine determines characterization information indicative of programming characteristics of the memory cell in response to the detected change in the amount of charge stored by the memory cell. The control engine then uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.
Claims29
A method for programming a memory cell having more than two possible states to a desired state, comprising:
- applying a first programming pulse to the memory cell;
- sensing a change in an amount of charge stored by the memory cell caused by applying the first programming pulse to the memory cell;
- in response to the sensed change in the amount of charge stored by the memory cell, a control engine determining characterization information to predict programming characteristics of the memory cell;
- and
- the control engine using the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.
A method for programming a memory cell having more than 2 possible states to a desired state, comprising:
- applying a first programming pulse to the memory cell;
- sensing a change in an amount of charge stored by the memory cell caused by applying the first programming pulse to the memory cell;
- in response to the sensed change in the amount of charge stored by the memory cell, a control engine determining characterization information to predict programming characteristics of the memory cell;
- and
- the control engine using the characterization information to directly program the memory cell to the desired state without performing a program verify operation.
A method for storing an analog voltage in a memory cell by programming a threshold voltage of the memory cell to a desired voltage, comprising:
- applying a first programming pulse to the memory cell;
- sensing a change in the threshold voltage of the memory cell caused by applying the first programming pulse to the memory cell;
- in response to the sensed change in the threshold voltage, a control engine determining characterization information to predict programming characteristics of the memory cell;
- and
- the control engine using the characterization information to program the threshold voltage of the memory cell directly to the desired voltage without performing a program verify operation.
A nonvolatile memory device comprising:
- a memory cell storing an amount of charge indicative of one of more than two possible states;
- sensing circuitry coupled to the memory cell and sensing the amount of charge stored by the memory cell;
- decoding circuitry coupled to the sensing circuitry;
- and
- a control engine coupled to the decoding circuitry, the control engine causing a programming pulse to be applied to the memory cell and determining characterization information in response to a detected change in the amount of charge stored by the memory cell, wherein the control engine uses the characterization information to predict programming characteristics of the memory cell, and further uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.
Dependencies are inferred from the claim text.