Method of polishing a semiconductor substrate during production of a semiconductor device

Abstract

A chemical mechanical polishing slurry comprised of particulates of metal oxide material including at least two metals with oxides having significantly different points of zero charges dispersed in pure water; a method of production of a chemical mechanical polishing slurry including a step of using two or more types of organometallic compounds comprised of at least two types of metal atoms with oxides having significantly different points of zero charges bonded with oxygen atoms for emulsion polymerization so as to form particulates including metal oxide material and a step of dispersing the particulates in pure water; a method of polishing using the chemical mechanical polishing slurry for chemical mechanical polishing of a polishing surface of a substrate so as to smooth the substrate; and a method of producing of a semiconductor device including a step of using the chemical mechanical polishing slurry for chemical mechanical polishing of a polishing surface of a substrate so as to smooth the substrate.

Dependencies are inferred from the claim text.