Precursor for semiconductor thin films and method for producing semiconductor thin films

A precursor for manufacturing a semiconductor thin film, comprising at least two oxide thin films each comprising an element as a dopant chosen from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements as main components of said semiconductor film, deposited on a substrate, the composition ratios with respect to the dopant element being different in said at least two thin films.

A precursor for manufacturing a semiconductor thin film, comprising at least one oxide thin film comprising Groups IB and IIIA elements and at least one oxide thin film comprising an element as a dopant chosen from a group which consists of Groups IA, IIA, IIB, VA, and VB elements alternately deposited on a substrate.

A precursor for manufacturing a semiconductor thin film, comprising an oxide thin film comprising Groups IB and IIIA elements deposited on a substrate, wherein the composition of at least one of said Groups IB and IIIA elements is varied in the direction of film thickness.

A method for manufacturing a semiconductor thin film, comprising heat treating in an atmosphere containing a Group VIA element a precursor for manufacturing a semiconductor thin film, the precursor comprising an oxide thin film comprising at least one element as a dopant selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements as main components of said semiconductor film, deposited on a substrate.

A method for manufacturing a semiconductor thin film, comprising the step of heat treating in an atmosphere containing a Group VIA element a precursor for manufacturing a semiconductor thin film, the precursor comprising at least two oxide thin films, each comprising an element as a dopant selected from a group which consist of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements as main components of said semiconductor film, deposited on a substrate, the composition ratios with respect to the dopant element being different in said at least two thin films.

A method for manufacturing a semiconductor thin film, comprising the step of heat treating in an atmosphere containing a Group VIA element a precursor for manufacturing a semiconductor thin film, the precursor comprising at least one oxide thin film comprising Groups IB and IIIA elements and at least one oxide thin film comprising an element as a dopant chosen from a group which consists of Groups IA, IIA, IIB, VA, and VB elements alternately deposited on a substrate.

A method for manufacturing a semiconductor thin film, comprising the step of heating a precursor for manufacturing a semiconductor thin film in an atmosphere containing a Group VIA element so that a semiconductor thin film having a chalcopyrite structure which comprises Group IB, IIIA, and VIA elements is formed, the precursor comprising an oxide thin film comprising Groups IB and IIIA elements deposited on the substrate, wherein the composition of at least one of said Groups IB and IIIA elements is varied in the direction of film thickness.