Low angle, low energy physical vapor deposition of alloys
AssigneeMicron Technology, Inc.
InventorYongjun Hu
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Abstract
An alloy or composite is deposited in a recess feature of a semiconductor substrate by sputtering an alloy or composite target into a recess, to form a first layer of deposited material. The first layer of deposited material is resputtered at a low angle and low energy, to redeposit the first layer of deposited material onto the bottom of the recess as a second layer of deposited material having a different stoichiometry than that of the first deposited material. In a further embodiment, a sputtering chamber ambient is comprised of argon and nitrogen. In yet a further embodiment, the resputtering step is followed by deposition of at least one layer of material with a different stoichiometry than that of the second deposited layer, to form a "graded" stoichiometry of material deposited in the recess.
Claims25
A method for depositing a material, comprising an alloy or a composite, into a recess, having an upper and lower surface, the method comprising the steps of:
- sputtering from a target, comprised of the material, onto the upper surface to form a layer of deposited material;
- and
- resputtering the layer of deposited material to redeposit onto the lower surface a resputtered layer of material, having a stoichiometry different than that of the layer of deposited material.
A method for depositing a material, comprising an alloy or a composite, into a recess, defined by an upper and lower surface, and sidewalls extending therebetween, the method comprising the steps of:
- sputtering from a target, comprised of the material, onto the upper surface to form a layer of deposited material;
- resputtering at a first substrate bias, the layer of deposited material to deposit material from the first layer, onto the lower surface, to form a first layer of resputtered material;
- and
- resputtering at a second substrate bias, the layer of deposited material, to redeposit on the first layer of resputtered material, a second layer of resputtered material, having a stoichiometry different than that of the first resputtered material.
Dependencies are inferred from the claim text.