On-site generation of ultra-high-purity buffered-HF for semiconductor processing
AssigneeStartec Ventures, Inc.
InventorsJoe G. Hoffman, R. Scot Clark
Life of this patent
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Abstract
A process for preparing ultra-high-purity buffered hydrofluoric acid on-site at a semiconductor manufacturing facility (front end). Anhydrous ammonia is purified by scrubbing in a high-pH liquor, and then combined with high-purity aqueous HF which has been purified by a similar process. The generation is monitored by a density measurement to produce an acid whose pH and buffering are accurately controlled.
Claims5
An on-site subsystem, in a semiconductor device fabrication facility, for providing ultra-high-purity buffered ammonium fluoride or hydrofluoric acid to a semiconductor manufacturing operation, comprising:
- a first evaporation source connected to receive an HF source and to provide a flow of HF vapor therefrom;
- a second evaporation source connected to receive a liquid source of ammonia and to provide a flow of ammonia vapor therefrom;
- said flow of HF vapor being connected to pass through a first ionic purifier unit which provides a recirculating volume of high-purity water, containing a high concentration of HF, in contact with said flow of HF vapor, wherein said first purifier passes purified HF gas;
- and
- said flow of ammonia vapor being connected to pass through a second ionic purifier unit which provides a recirculating volume of high-purity water, containing a high concentration of ammonium hydroxide, in contact with said flow of ammonia vapor, wherein said second purifier passes purified ammonia gas;
- a first generator unit, connected to receive said flow of HF gas from said first purifier and to combine said HF gas with high-purity acidic deionized water to produce ultra-pure hydrofluoric acid, said first generator unit also passing a top stream of impure HF gas contaminated with light impurities;
- said ultra-pure hydrofluoric acid and said flow of ammonia vapor being connected to pass into a second generator, which combines said ammonia vapor into said ultra-pure hydrofluoric acid to produce an aqueous solution of ultra-pure buffered hydrofluoric acid of controlled concentration;
- and
- a piping connection which routes said aqueous solution to points of use in the semiconductor device fabrication facility.
Dependencies are inferred from the claim text.