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US 5,718,813 AGranted
Enhanced reactive DC sputtering system
AssigneeAdvanced Energy Industries, Inc.
InventorsGeoffrey N. Drummond, Richard A. Scholl
Life of this patent
Estimating the term…
Abstract
An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
Claims48
A method of reactive sputtering comprising the steps of:
- a. supplying a material target to expose coating material within a coating chamber;
- b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- c. furnishing direct current power to said coating chamber to create a plasma composed of charged particles;
- d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma;
- e. clearing an uneven buildup of charged particles within said chamber so as to avoid potential arcing conditions in the first place wherein said step of clearing an uneven buildup of charged particles occurs for a time which does not extinguish said plasma;
- and then
- f. continuing to cause deposition upon said substrate.
4 more elements
A method of reactive sputtering comprising the steps of:
- a. supplying a material target to expose coating material within a coating chamber;
- b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles;
- d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma;
- and
- e. reversing said voltage so as to avoid potential arcing conditions in the first place during said deposition wherein said step of reversing said direct current power occurs for a time which does not extinguish said plasma;
- and then
- f. continuing to cause deposition upon said substrate.
5 more elements
A method of reactive sputtering comprising the steps of:
- a. supplying a material target to expose coating material within a coating chamber;
- b. supplying at least one reactive gas within said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- c. furnishing direct current power by applying a voltage within said coating chamber to create a plasma composed of charged particles;
- d. causing deposition of at least some of said electrically insulating material upon a substrate through action of said plasma;
- and
- e. interrupting said direct current power so as to avoid potential arcing conditions in the first place wherein said step of interrupting said direct current power occurs for a time which does not extinguish said plasma;
- and then
- f. continuing to cause deposition upon said substrate.
5 more elements
A reactive plasma sputtering system comprising:
- a. a coating chamber;
- b. a material target disposed to expose coating material within said chamber;
- c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- d. an anode positioned within said coating chamber in proximity to said material target;
- e. a DC power source having a first lead connected to said material target and a second lead connected to said anode;
- f. an inductor means connected in series along said first lead and having first and second inductor portions wherein said first and second portions are magnetically coupled;
- and
- g. a switch connected from said second lead to said first lead at a point in between said first and second inductor portions.
5 more elements
A reactive plasma sputtering system comprising:
- a. a coating chamber;
- b. a material target disposed to expose coating material within said chamber;
- c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- d. an anode positioned within said coating chamber in proximity to said material target;
- e. a DC power source which applies an output voltage across said anode and said material target;
- and
- f. voltage reversal circuitry which acts so as to avoid potential arcing conditions in the first place during processing and then to automatically resume said processing
- wherein said voltage reversal circuitry causes a voltage reversal for a time which does not extinguish said plasma.
5 more elements
A reactive plasma sputtering system comprising:
- a. a coating chamber;
- b. a material target disposed to expose coating material within said chamber;
- c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- d. a DC power source wherein which applies direct current power within said coating chamber to cause processing;
- and
- e. clearing circuitry which acts to clear an uneven buildup of charged particles so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and which then acts to automatically resume said processing.
3 more elements
A reactive plasma sputtering system comprising:
- a. a coating chamber;
- b. a material target disposed to expose coating material within said chamber;
- c. a reactive gas supply connected to said coating chamber wherein said gas reacts with said coating material to form electrically insulating material;
- d. a DC power source which applies direct current power within said coating chamber to cause processing;
- and
- e. interruption circuitry which interrupts said direct current power so as to avoid potential arcing conditions in the first place during processing, which acts for a time which does not extinguish said plasma, and then which automatically resumes said processing.
3 more elements
Dependencies are inferred from the claim text.