Optical semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasunori Miyazaki, Eitaro Ishimura, Tatsuya Kimura
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Abstract
In an optical semiconductor device including a DFB laser and a light absorption modulator, a semi-insulating semiconductor layer is disposed between a carrier blocking layer and a upper cladding layer, the upper cladding layer having an opposite conductivity type from that of the semiconductor substrate and disposed on a buried waveguide and the carrier blocking layer. The capacitance between the carrier blocking layer and the upper cladding layer is reduced. Therefore, mutual interference between the DFB laser and the light absorption modulator through the carrier blocking layer is reduced.
Claims6
An optical semiconductor device comprising:
- a semiconductor substrate having a surface and a first conductivity type;
- and
- a plurality of optical semiconductor elements disposed on said surface of said semiconductor substrate and optically arranged in series, each of said optical semiconductor elements having a buried waveguide and burying semiconductor structures on opposite sides of said buried waveguide, said burying semiconductor structures continuously extending along said plurality of optical semiconductor elements, each of said burying semiconductor structures comprising a semi-insulating semiconductor layer and at least one pair of laminated layers disposed on said semi-insulating semi-conductor layer and comprising a charge carrier blocking layer having the first conductivity type, and a semi-insulating semi-conductor layer disposed on said charge carrier blocking layer.
Dependencies are inferred from the claim text.