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US 5,717,224 AGranted
Semiconductor device having an insulated gate field effect thin film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
Claims12
A semiconductor device formed on an insulating substrate comprising:
- a semiconductor region having a source, a drain and a channel located between said source and said drain;
- a gate electrode provided adjacent to said channel with a gate insulating layer therebetween;
- a first interlayer insulating film comprising an organic resin film or a multilayer of a silicon oxide layer and an organic resin layer provided over said gate electrode;
- a source electrode connected to said source and provided on said first interlayer insulating film, said source electrode functioning to shield at least said channel from external light;
- and
- a second interlayer insulating film formed on said first interlayer insulating film wherein a portion of said source electrode is interposed between said first and second interlayer insulating film,
- wherein said second interlayer insulating film comprises a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride.
4 more elements
A semiconductor device formed on an insulating substrate comprising:
- a semiconductor region having a source, a drain and a channel located between said source and said drain;
- a gate electrode provided adjacent to said channel with a gate insulating layer therebetween;
- a first interlayer insulating film provided over said gate electrode, said first interlayer insulating film comprising an organic resin layer or a multi-layer of a silicon oxide layer and an organic resin layer;
- light shielding conductive film provided on said first interlayer insulating film for shielding at least said channel region from external light;
- a second interlayer insulating film provided on said first interlayer insulating film with said light shielding conducting film interposed therebetween, said second interlayer insulating film comprising a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride;
- and
- a pixel electrode connected to said drain and provided on said second interlayer insulating film.
4 more elements
A thin film transistor provided on a substrate comprising:
- a source and a drain;
- a source line connected to one of said source and said drain;
- a pixel electrode connected to the other of said source and said drain;
- a first interlayer provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer;
- and
- a second interlayer provided on said first interlayer and comprising a material selected from the group consisting of silicon nitride, aluminum oxide and aluminum nitride.
3 more elements
A thin film transistor provided on a substrate comprising:
- a source and a drain;
- a source line connected to one of said source and said drain;
- a pixel electrode;
- a conductor extending from said pixel electrode and connected to the other of said source and said drain;
- a first interlayer having a planarized surface and provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer;
- and
- a second interlayer provided on said first interlayer.
4 more elements
Dependencies are inferred from the claim text.