Method for producing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSetsuo Nakajima, Shunpei Yamazaki, Naoto Kusumoto, Satoshi Teramoto
Life of this patent
Estimating the term…
Abstract
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
Claims15
A method for producing a semiconductor device comprising the steps of:
- preparing a rectangular substrate having an insulating surface;
- forming a semiconductor film comprising amorphous silicon on said insulating surface;
- disposing a metal element in contact with said semiconductor film, said metal element being capable of promoting crystallization of the amorphous silicon;
- and
- irradiating the semiconductor film with a laser light to increase crystallinity of the semiconductor film, said laser light having a cross section elongated in one direction at a surface of said semiconductor film;
- and
- moving said substrate relative to said laser light in a direction orthogonal to an elongation direction of said cross section during the irradiation of said laser light,
- wherein the elongation direction of said cross section at a surface of said semiconductor film is oblique with respect to the sides of said substrate.
A method for producing a semiconductor device comprising the steps of:
- preparing a rectangular substrate having an insulating surface;
- forming a semiconductor film comprising silicon on said insulating surface;
- and
- irradiating the semiconductor film with a laser light to increase crystallinity of the semiconductor film, said laser light having a cross section elongated in one direction at a surface of said semiconductor film;
- and
- moving said substrate relative to said laser light in a direction orthogonal to an elongation direction of said cross section during the irradiation of said laser light,
- wherein the elongation direction of said cross section at a surface of said semiconductor film is oblique with respect to the sides of said substrate.
A method for producing a semiconductor device comprising the steps of:
- preparing a rectangular substrate having an insulating surface;
- forming a semiconductor film comprising silicon on said insulating surface;
- and
- irradiating the semiconductor film with a laser light to increase crystallinity of the semiconductor film, said laser light having a cross section elongated in one direction at a surface of said semiconductor film;
- and
- moving said substrate relative to said laser light in a direction orthogonal to an elongation direction of said cross section during the irradiation of said laser light,
- wherein the elongation direction of said cross section at a surface of said semiconductor film is approximately in parallel with a diagonal of said substrate.
Dependencies are inferred from the claim text.