Fabrication method of polarization-controlled surface-emitting laser diode using tilted-cavity

A fabrication method of a polarization controlled surface emitting laser of a bottom emitting type having a sidewall inclined with respect to a normal to a surface of the laser comprising:

• forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate;
• forming a patterned metal layer on the top mirror layer as an etching mask;
• providing an ion beam for etching the top mirror layer and the active layer;
• and
• positioning the top mirror layer and the active layer in the ion beam to cause the ion beam to etch the top mirror layer and the active layer to form the inclined sidewall with a face of the substrate being rotated about either one of a ›110! or a ›110! direction and forming an angle ranging between 5.degree. and 45.degree. measured between the inclined sidewall and a ›001! direction while using the patterned metal layer as an etching mask.

A fabrication method of a polarization controlled surface emitting layer of a top emitting type having a sidewall inclined with respect to a normal to a surface of the laser comprising:

• forming a bottom mirror layer, an active layer and a top mirror layer and a protection film on a semiconductor substrate;
• forming a photoresist pattern on the protection film;
• etching the protection film using the photoresist pattern as a mask;
• providing an ion beam for etching an exposed portion of the top mirror layer;
• etching the exposed portion of the top mirror layer within the ion beam to form the inclined sidewall with a face of the substrate being rotated about either one of a ›110! or a ›110! direction and forming an angle ranging between 5.degree. and 45.degree. measured between the inclined sidewall and a ›001! direction while using the photoresist pattern and the etched protection as an etching mask;
• and
• forming an ion implanted region in the active layer by ion implantation using the photoresist pattern and the etched protection film as an ion implantation mask.