Preparation of a semiconductor thin film
AssigneeMidwest Research Institute
InventorsMartin Pehnt, Douglas L. Schulz, Calvin J. Curtis, David S. Ginley
Life of this patent
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Abstract
A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
Claims10
A process for the preparation of a semiconductor film, the process comprising depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
A process for the preparation of a cadmium telluride film, the process comprising depositing nanoparticles of cadmium telluride onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.
Dependencies are inferred from the claim text.