# US 5,710,483 A · Field emission device with micromesh collimator > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,710,483 A - Document ID: US5710483A - Status: Granted - Kind: A - Application number: 08/629,160 - Filed: 1996-04-08 - Granted: 1998-01-20 - Earliest claimed: 1996-04-08 - Assignees: Industrial Technology Research Institute - Inventors: Chao-Chi Peng - Web page: https://patentgrep.com/patent/US5710483A ## CPC - H01J 3/022: {with microengineered cathode, e.g. Spindt-type} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A structure is described in which subpixel-sized electron beams are formed by extraction from field emission microtips located on cathode columns over which orthogonally disposed gate lines have been laid. After accelerating past openings in said gate lines, all electrons originating from the same subpixel are made to pass through a single micromesh whose electric potential is more negative than that of the gate. This results in said electrons becoming collimated and forming a parallel beam which diverges only slightly before it reaches the phosphor screen (anode). A process for manufacturing this structure is also described. Said process does not require that the microtips and the micromesh be carefully aligned nor does the presence of the micromesh lead to any reduction in optical resolution. The problem of minimizing stress in the micromesh is also addressed. ## Claims ### Claim 1 A cold cathode field emission display comprising: an insulating substrate; cathode columns for said display, formed of parallel spaced conductors on said substrate; a first dielectric layer on said cathode columns; gate lines on said first dielectric layer, formed of parallel spaced conductors, over and orthogonal to, said cathode columns; first openings, multiply located at all overlaps of said cathode columns and said gate lines, extending through said gate lines and through said first dielectric layer; cone shaped field emission microtips on said cathode columns, each microtip being located inside one of said first openings; a second dielectric layer, on the gate lines; conductive focus lines, on said second dielectric layer, over said cathode columns; second openings, in said second dielectric layer, singly located over said overlaps; meshed electrodes, comprising holes in a membrane, formed from those parts of the focus lines that overlie said second openings; and a conductive phosphor screen located above the focus lines. ### Claim 2 (depends on 1) The structure of claim 1 wherein the thickness of said focus lines is between about 0.2 and 2 microns. ### Claim 3 (depends on 1) The structure of claim 1 wherein said focus lines comprise a material taken from the group consisting of molybdenum, niobium, and polysilicon. ### Claim 4 (depends on 1) The structure of claim 1 wherein said focus lines further comprise: a layer of niobium, closer to said gate lines; and a layer of molybdenum, further from said gate lines. ### Claim 5 (depends on 1) The structure of claim 1 wherein said holes have a circular shape. ### Claim 6 (depends on 1) The structure of claim 1 wherein said holes have a rectangular shape and are arranged in a brick wall pattern. ### Claim 7 (depends on 1) The structure of claim 1 wherein the thickness of the first dielectric layer is between about 0.5 and 2 microns. ### Claim 8 (depends on 1) The structure of claim 1 wherein the thickness of the second dielectric layer is between about 3 and 10 microns. ### Claim 9 (depends on 1) The structure of claim 1 wherein the number of microtips located within one of said second openings is between 4 and about 1,000. ### Claim 10 (depends on 1) The structure of claim 1 wherein the the number of holes per mesh, located within one of said second openings, is between about 10 and 1,000. ### Claim 11 (depends on 1) The structure of claim 1 wherein said microtips comprise molybdenum or silicon. ### Claim 12 (depends on 1) The structure of claim 1 wherein the distance between said meshed electrodes and said phosphor screen is between about 200 microns and 20 mm. ### Claim 13 A method for manufacturing a cold cathode field emission display comprising: (a) providing an insulating substrate; (b) forming conductive cathode columns on said substrate; (c) depositing a first dielectric layer on said cathode columns; (d) forming gate lines on said first dielectric layer, over and orthogonal to, said cathode columns; (e) forming openings, multiply located at all overlaps of said cathode columns and said gate lines, extending through said gate lines and through said first dielectric layer; (f) forming cone shaped field emission microtips on said cathode columns, each microtip being located inside one of said first openings; (g) depositing a second dielectric layer, on said gate lines; (h) planarizing said second dielectric layer; (i) depositing a metal layer on said second dielectric layer; (j) patterning and then etching said metal layer to form focus lines and meshed electrodes; (k) using said etched metal layer as a mask, selectively overetching said second dielectric layer, thereby entirely removing said second dielectric layer from under said meshed electrodes; and (l) permanently positioning a conductive phosphor screen above said focus lines. ### Claim 14 (depends on 13) The method of claim 13 wherein said first dielectric layer comprises silicon oxide or silicon nitride. ### Claim 15 (depends on 13) The method of claim 13 wherein said second dielectric layer comprises silicon oxide or aluminum oxide. ### Claim 16 (depends on 13) The method of claim 13 wherein the planarizing of the second dielectric layer is achieved by means of chemical mechanical polishing. ### Claim 17 (depends on 13) The method of claim 13 wherein the thickness of the second dielectric layer, after planarizing, is between about 3 and 10 microns. ### Claim 18 (depends on 13) The method of claim 13 wherein the step of selectively overetching said second dielectric layer further comprises etching in buffered hydrofluoric acid. ### Claim 19 A method for manufacturing a cold cathode field emission display comprising: (a) providing an insulating substrate; (b) forming conductive cathode columns on said substrate; (c) depositing a first dielectric layer on said cathode columns; (d) forming gate lines on said first dielectric layer, over and orthogonal to, said cathode columns; (e) forming openings, multiply located at all overlaps of said cathode columns and said gate lines, extending through said gate lines and through said first dielectric layer; (f) forming cone shaped field emission microtips on said cathode columns, each microtip being located inside one of said first openings; (g) depositing a second dielectric layer, on said gate lines; (h) planarizing said second dielectric layer; (i) depositing a first metal layer on said second dielectric layer; (j) depositing a second metal layer on said first metal layer; (k) patterning and then etching said first and second metal layers to form focus lines and meshed electrodes; (l) using said etched metal layers as a mask, selectively overetching said second dielectric layer, thereby entirely removing said second dielectric layer from under said meshed electrodes; and (m) permanently positioning a conductive phosphor screen above said focus lines. ### Claim 20 (depends on 19) The method of claim 19 wherein said first metal layer comprises niobium deposited to a thickness between about 0.2 and 2 microns. ### Claim 21 (depends on 19) The method of claim 19 wherein said second metal layer comprises molybdenum deposited to a thickness between about 0.2 and 2 microns.