# US 5,710,439 A · Optoelectronic integrated device having optical elements and electronic elements grown in a monolithic form on a GaAs ssubstrate

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- Number: US 5,710,439 A
- Document ID: US5710439A
- Status: Granted
- Kind: A
- Application number: 08/770,552
- Filed: 1996-12-23
- Granted: 1998-01-20
- Earliest claimed: 1996-02-01
- Assignees: Furukawa Electric Co., Ltd.
- Inventors: Michio Ohkubo
- Web page: https://patentgrep.com/patent/US5710439A

## CPC

- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

In an optoelectronic integrated device having an optical element section in the wavelength region of 1.33 to 1.55 .mu.m and an electronic element section such as an HEMT integrated in a monolithic form on a GaAs substrate, the optical element section includes light receiving elements or light emitting elements, and an optical absorption layer of the light receiving element or a semiconductor layer forming an active layer of the light emitting element is formed of GaAsN-series compound semiconductor which is lattice-matching with the GaAs substrate, particularly, one of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGalAsN, AlGaAsPN and InGaAlAsPN.

## Claims

### Claim 1

An optoelectronic integrated device comprising:
an optical element section and an electronic element section formed in a monolithic form on a GaAs substrate,
said optical element section including a light receiving element formed on the GaAs substrate, the light receiving element having an optical absorption layer made of GaAsN-series compound semiconductor.

### Claim 2

An optoelectronic integrated device comprising:
an optical element section and an electronic element section formed in a monolithic form on a GaAs substrate,
said optical element section including a light emitting element formed on the GaAs substrate, the light emitting element having an active layer made of GaAsN-series compound semiconductor.

### Claim 3 (depends on 1)

An optoelectronic integrated device according to claim 1, wherein said GaAsN-series compound semiconductor is one selected from a group consisting of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGaAlAsN, AlGaAsPN and InGaAlAsPN.

### Claim 4 (depends on 1)

An optoelectronic integrated device according to claim 1, wherein said optical element section receives light in the wavelength region of 1.3 to 1.55 .mu.m.

### Claim 5 (depends on 1)

An optoelectronic integrated device according to claim 1, wherein said electronic element section includes at least one of a high electron mobility transistor (HEMT), field effect transistor (FET) and hetero junction bipolar transistor (HBT).

### Claim 6 (depends on 2)

An optoelectronic integrated device according to claim 2, wherein said GaAsN-series compound semiconductor selected from a group consisting of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGaAlAsN, AlGaAsPN and InGaAlAsPN.

### Claim 7 (depends on 2)

An optoelectronic integrated device according to claim 2, wherein said optical element section emits light in the wavelength region of 1.3 to 1.55 .mu.m.

### Claim 8 (depends on 3)

An optoelectronic integrated device according to claim 3, wherein said optical element section receives light in the wavelength region of 1.3 to 1.55 .mu.m.

### Claim 9 (depends on 6)

An optoelectronic integrated device according to claim 6, wherein said optical element section emits light in the wavelength region of 1.3 to 1.55 .mu.m.

### Claim 10 (depends on 2)

An optoelectronic integrated device according to claim 2, wherein said electronic element section includes at least one of a high electron mobility transistor (HEMT), field effect transistor (FET) and hereto junction bipolar transistor (HBT).

### Claim 11 (depends on 3)

An optoelectronic integrated device according to claim 3, wherein said electronic element section includes at least one of a high electron mobility transistor (HEMT), field effect transistor (FET) and hereto junction bipolar transistor (HBT).

### Claim 12 (depends on 6)

An optoelectronic integrated device according to claim 6, wherein said electronic element section includes at least one of a high electron mobility transistor (HEMT), field effect transistor (FET) and hereto junction bipolar transistor (HBT).