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US 5,710,436 AGranted
Quantum effect device
AssigneeKabushiki Kaisha Toshiba
InventorsTetsufumi Tanamoto, Riichi Katoh, Li Zhang, Tadashi Sakai, Shigeki Takahashi, Taketoshi Suzuki
Life of this patent
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Abstract
A quantum effect device includes a first layer having a plurality of charge confinement regions, a second layer opposing the first layer and separated from the first layer, the second layer having charges at a high concentration and consisting of a metal layer or a semiconductor layer, and a third layer consisting of an insulating layer or a semiconductor layer having a large band gap between the first layer and the second layer.
Claims20
A quantum effect device comprising:
- a first layer having a plurality of charge confinement regions that respectively confine a charged particle to be retained therein during an operational mode, a selected number of said plurality of charge confinement regions being disposed proximate to each other so as to influence energy levels thereof and relative occupations of said charged particle;
- and
- a second layer opposing and separated from said first layer and having a higher concentration of charged particles than said first layer.
A quantum effect device comprising:
- a first layer having a plurality of charge confinement regions that respectively confine a charged particle to be retained therein during an operational mode, a selected number of said plurality of charge confinement regions being disposed proximate to each other so as to influence energy levels thereof and relative occupations of said charged particle;
- and
- a second layer opposing and separated from said first layer and having a second charge as a mirror of a first charge in respective of said charge confinement regions, which has a polarity opposite to that of the first charge.
A quantum effect device comprising:
- a substrate having movable charges;
- a first layer which is formed on said substrate, and in which movement of charges is substantially suppressed;
- a plurality of cells formed in a matrix on said first layer, said plurality of cells forming a second layer and each having a first confinement region and a second confinement region formed therein and disposed proximate to each other so as to influence energy levels thereof and relative charge occupations, at least one of said first confinement region and said second confinement region being formed of a first semiconductor and configured to assume respective polarized binary states in correspondence with a respective presence and absence of charges;
- a plurality of bit lines insulatively formed on said plurality of cells, respective of said plurality of bit lines being coupled to respective of said first confinement region of said plurality of cells arranged in a column direction;
- and
- a plurality of word lines insulatively formed on said plurality of cells, respective of said plurality of word lines being coupled to respective of said second confinement region of said plurality of cells arranged in a row direction.
3 more elements
Dependencies are inferred from the claim text.