SOI fabrication method

Abstract

A first region of a seed substrate is separated from a bonded handle substrate by etching and/or fracturing a second region of the seed substrate. A third region of the seed substrate remains bonded to the handle wafer. Etching and etch ant distribution are facilitated by capillary action in trenches formed in the seed substrate prior to bonding of the handle substrate. A portion of the second region may be removed by undercut etching prior to handle bonding. Elevated pressure and etchant composition are used to suppress bubble formation during etching. Alternatively, pressure from bubble formation is used to fracture a portion of the second region. First, second, and third regions are defined by a variety of methods.

Dependencies are inferred from the claim text.