# US 5,708,959 A · Substrate for semiconductor apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,708,959 A - Document ID: US5708959A - Status: Granted - Kind: A - Application number: 08/635,651 - Filed: 1996-04-22 - Granted: 1998-01-13 - Earliest claimed: 1982-07-26 - Assignees: Sumitomo Electric Industries, Ltd. - Inventors: Mituo Osada; Yoshinari Amano; Nobuo Ogasa; Akira Ohtsuka - Web page: https://patentgrep.com/patent/US5708959A ## CPC - B22F 3/24: After-treatment of workpieces or articles {(B22F3/1146 takes precedence)} - H10W 40/257: {having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures (H10W40/254, H10W40/251 take precedence)} - H10W 70/6875: {being on a metallic substrate, e.g. insulated metal substrates [IMS]} - H10W 72/073: {of die-attach connectors} - H10W 72/07337: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy} - H10W 72/30: Die-attach connectors - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/351: {Materials of die-attach connectors} - Y10T 29/4913: Assembling to base an electrical component, e.g., capacitor, etc. - Y10T 428/12014: having metal particles - Y10T 428/12056: Entirely inorganic - Y10T 428/12493: Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate. ## Claims ### Claim 1 A semiconductor package for a semiconductor chip, comprising: (a) a first member consisting essentially of alumina and forming an enclosure material for said semiconductor package; (b) a second member made by a powder metallurgical method, wherein the powder metallurgical method comprises one of the steps of: (1) mixing only one of tungsten powder and molybdenum powder with copper powder, forming a mixed powder compact and sintering said mixed powder compact at a temperature higher than the melting point of copper, and (2) forming only one of tungsten powder and molybdenum powder into a powder compact, sintering said powder compact to form a sintered compact, and infiltrating said sintered compact with molten copper; wherein said second member has a copper content within the range of 5-20 percent by weight. ### Claim 2 (depends on 1) A semiconductor package for a semiconductor chip as recited in claim 1, wherein said second member comprises 80-95 percent by weight of tungsten in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 3 (depends on 1) A semiconductor package for a semiconductor chip as recited in claim 1, wherein said second member comprises 80-95 percent by weight of molybdenum in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 4 A package for a semiconductor chip comprising: (a) an alumina member enclosing said semiconductor chip; and (b) a heat radiation member comprising 80-90 percent by weight of preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a sintered compact, and 10-20 percent by weight of copper, said heat radiation member being made by forming only one of tungsten powder and molybdenum powder into a powder compact, sintering said powder compact to form a sintered compact, and infiltrating said sintered compact with molten copper. ### Claim 5 (depends on 4) A package for a semiconductor chip as recited in claim 4, wherein the heat radiation member comprises 80-90 percent by weight of tungsten in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.50 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 7.0.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 6 (depends on 4) A package for a semiconductor chip as recited in claim 4, wherein the heat radiation member comprises 80-90 percent by weight of molybdenum in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.41 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 6.5.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 7 A package for a semiconductor chip, said package made by the process of: (a) providing a first member consisting essentially of alumina; (b) producing a second member by a powder metallurgical method, wherein the powder metallurgical method comprises one of the steps of: (1) mixing only one of tungsten powder and molybdenum powder with copper powder, forming a mixed powder compact and sintering said mixed powder compact at a temperature higher than the melting point of copper, and (2) forming only one of tungsten powder and molybdenum powder into a powder compact, sintering said powder compact to form a sintered compact, and infiltrating said sintered compact with molten copper; (c) selecting a copper content within the range of 5-20 percent by weight; and (d) packaging said integrated circuit with said first and second members. ### Claim 8 (depends on 7) A package for a semiconductor chip as recited in claim 7, wherein said second member comprises 80-95 percent by weight of tungsten in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 9 (depends on 7) A package for a semiconductor chip as recited in claim 7, wherein said second member comprises 80-95 percent by weight of molybdenum in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 10 A package for a semiconductor device, said package comprising a first member comprising alumina and a second member of composite material comprising by weight of about 5 to 30% of copper portion and from 95 to 70% of a preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a porous block, said porous block having been impregnated with said copper portion from the molten state of said copper. ### Claim 11 (depends on 10) A package for a semiconductor device as recited in claim 10, wherein said second member comprises 70-95 percent by weight of tungsten in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 9.7.times.10.sup.-6 /.degree.C. ### Claim 12 (depends on 10) A package for a semiconductor device as recited in claim 10, wherein said second member comprises 70-95 percent by weight of molybdenum in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 8.4.times.10.sup.-6 /.degree.C. ### Claim 13 (depends on 10) A package for a semiconductor device as recited in claim 10, wherein said second member comprises 80-90 percent by weight of tungsten in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.50 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 7.0.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 14 (depends on 10) A package for a semiconductor device as recited in claim 10, wherein said second member comprises 80-90 percent by weight of molybdenum in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.41 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 6.5.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 15 A package for a semiconductor chip comprising: (a) an alumina member enclosing said semiconductor chip; and (b) a heat radiation member comprising 70-95 percent by weight of preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a sintered compact, and 5-30 percent by weight of copper. ### Claim 16 (depends on 15) A package for a semiconductor chip as recited in claim 15, wherein the heat radiation member comprises 70-95 percent by weight of tungsten in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 9.7.times.10.sup.-6 /.degree.C. ### Claim 17 (depends on 15) A package for a semiconductor chip as recited in claim 15, wherein the heat radiation member comprises 70-95 percent by weight of molybdenum in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 8.4.times.10.sup.-6 /.degree.C. ### Claim 18 (depends on 15) A package for a semiconductor chip as recited in claim 15, wherein the heat radiation member comprises 80-95 percent by weight of tungsten in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 19 (depends on 15) A package for a semiconductor chip as recited in claim 15, wherein the heat radiation member comprises 80-95 percent by weight of molybdenum in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 20 A package for a semiconductor chip comprising: (a) a first member consisting essentially of alumina and enclosing said semiconductor chip; and (b) a second member comprising 80-95 percent by weight of preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a sintered compact, and a copper content of 5-20 percent by weight. ### Claim 21 (depends on 20) A package for a semiconductor chip as recited in claim 20, wherein said second member comprises 80-95 percent by weight of tungsten in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 22 (depends on 20) A package for a semiconductor chip as recited in claim 20, wherein said second member comprises 80-95 percent by weight of molybdenum in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 23 A package for a semiconductor device, said package comprising a first member consisting essentially of alumina and a second member of composite material comprising by weight of about 5 to 30% of copper portion and from 95 to 70% of a preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a porous block, said porous block having been impregnated with said copper portion from the molten state of said copper. ### Claim 24 (depends on 23) A package for a semiconductor device as recited in claim 23, wherein said second member comprises 70-95 percent by weight of tungsten in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 9.7.times.10.sup.-6 /.degree.C. ### Claim 25 (depends on 23) A package for a semiconductor device as recited in claim 23, wherein said second member comprises 70-95 percent by weight of molybdenum in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 8.4.times.10.sup.-6 /.degree.C. ### Claim 26 (depends on 23) A package for a semiconductor device as recited in claim 23, wherein said second member comprises 80-90 percent by weight of tungsten in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.50 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 7.0.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 27 (depends on 23) A package for a semiconductor device as recited in claim 23, wherein said second member comprises 80-90 percent by weight of molybdenum in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.41 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 6.5.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 28 A package for a semiconductor chip comprising: (a) an alumina member enclosing said semiconductor chip; and (b) a heat dissipation member comprising 80-90 percent by weight of preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a sintered compact, and 10-20 percent by weight of copper, said heat dissipation member being made by forming tungsten powder, molybdenum powder, or a mixture thereof into a powder compact, sintering said powder compact to form a sintered compact, and infiltrating said sintered compact with molten copper. ### Claim 29 (depends on 28) A package for a semiconductor chip as recited in claim 28, wherein the heat dissipation member comprises 80-90 percent by weight of tungsten in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.50 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 7.0.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 30 (depends on 28) A package for a semiconductor chip as recited in claim 28, wherein the heat dissipation member comprises 80-90 percent by weight of molybdenum in the form of a sintered compact and 10-20 percent by weight of copper, and has a thermal conductivity of at least 0.41 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 6.5.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C. ### Claim 31 A package for a semiconductor chip comprising: (a) an alumina member enclosing said semiconductor chip; and (b) a heat dissipation member comprising 70-95 percent by weight of preselected material selected from the group consisting essentially of only one of tungsten and molybdenum in the form of a sintered compact, and 5-30 percent by weight of copper. ### Claim 32 (depends on 31) A package for a semiconductor chip as recited in claim 31, wherein the heat dissipation member comprises 70-95 percent by weight of tungsten in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 9.7.times.10.sup.-6 /.degree.C. ### Claim 33 (depends on 31) A package for a semiconductor chip as recited in claim 31, wherein the heat dissipation member comprises 70-95 percent by weight of molybdenum in the form of a sintered compact and 5-30 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 8.4.times.10.sup.-6 /.degree.C. ### Claim 34 (depends on 31) A package for a semiconductor chip as recited in claim 31, wherein the heat dissipation member comprises 80-95 percent by weight of tungsten in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.45 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.2.times.10.sup.-6 /.degree.C. and 8.3.times.10.sup.-6 /.degree.C. ### Claim 35 (depends on 31) A package for a semiconductor chip as recited in claim 31, wherein the heat dissipation member comprises 80-95 percent by weight of molybdenum in the form of a sintered compact and 5-20 percent by weight of copper, and has a thermal conductivity of at least 0.38 cal/cm. sec. .degree.C. and a thermal expansion coefficient between 5.9.times.10.sup.-6 /.degree.C. and 7.9.times.10.sup.-6 /.degree.C.