# US 5,708,588 A · Flash EEPROM memory with improved discharged speed using substrate bias and method therefor

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- Number: US 5,708,588 A
- Document ID: US5708588A
- Status: Granted
- Kind: A
- Application number: 08/464,024
- Filed: 1995-06-05
- Granted: 1998-01-13
- Earliest claimed: 1995-04-07
- Assignees: Advanced Micro Devices, Inc.
- Inventors: Sameer S. Haddad; Hao Fang
- Web page: https://patentgrep.com/patent/US5708588A

## CPC

- H10D 30/685: {from the channel}
- G11C 16/14: Circuits for erasing electrically, e.g. erase voltage switching circuits
- Y10S 438/972: Stored charge erasure
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A floating gate cell memory device, such as an EPROM or flash EEPROM, with improved discharge speed. A negative bias is applied to the effective substrate during discharge. The negative bias increases the electric field near the junction, thereby increasing the number of hot holes which can be injected to the floating gate, improving discharge speed.

## Claims

### Claim 1

A method for discharging a floating gate cell in an array of floating gate cells where:
each cell comprises first and second first conductivity type semiconductor regions, a channel semiconductor region of a second, opposite, conductivity type, and a selectively chargeable gate structure including a first dielectric overlying the channel region, with the first, second and channel semiconductor regions formed in an encompassing semiconductor region of the second conductivity type, and the first and second semiconductor regions defining a controlled current path through the channel region which tends to be rendered conductive in response to a voltage greater than a gate threshold level being applied to the gate structure;
and in which:
selectively charging the gate structure raises the gate threshold level, such that conduction of the cell in response to application to the gate structure of a predetermined voltage is indicative of the logical state of the cell, and
the cell is dischargeable by moving electrons from the gate structure through the first dielectric to the first semiconductor region to remove the charge on the gate structure;
and further in which:
the cells are arranged in a predetermined number of equal-sized sectors, with the first semiconductor regions of each cell in the sector electrically connected in common, but isolated from the first semiconductor regions of the cells of the other sectors;
each sector is divided into respective banks of cells;
each bank of cells is arranged in a series of rows and columns, with each row having an associated word line electrically connecting the gate structures of each of the cells within the row, each column having an associated selection device and sub-bit line electrically connecting the second semiconductor regions of each of the cells with the column;
the word lines of the corresponding row of the respective banks of cells within the sector are electrically connected; and
the sub-bit lines of the corresponding columns of the respective banks of cells within the sector are selectively electrically connected in the alternative to a respective bit line in accordance with the state of the associated selection devices;
the method of discharging a floating gate cell comprising the steps of:
applying, during erasure only, a relatively low magnitude predetermined positive voltage in the range of from approximately +0.50 to +5.00 volts to one of the first and second semiconductor regions and connecting the other of the first and second semiconductor regions to a high impedance;
applying, during erasure only, a relatively high magnitude predetermined negative voltage in the range of from approximately -13.00 to -7.00 volts to the gate structure; and
applying, during erasure only, a relatively low magnitude predetermined negative voltage in the range of from approximately -0.01 to -4.50 volts to the encompassing semiconductor region.

### Claim 2 (depends on 1)

The method of claim 1, wherein the discharging step is selectively effected on individual cells.