# US 5,708,281 A · Semiconductor device and photoelectric conversion apparatus using the same

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- Number: US 5,708,281 A
- Document ID: US5708281A
- Status: Granted
- Kind: A
- Application number: 08/213,821
- Filed: 1994-03-14
- Granted: 1998-01-13
- Earliest claimed: 1989-03-29
- Assignees: Canon Kabushiki Kaisha
- Inventors: Masakazu Morishita
- Web page: https://patentgrep.com/patent/US5708281A

## CPC

- H10D 10/021: {of heterojunction BJTs [HBT]}
- H10D 10/861: {having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe
- H10F 30/245: {Bipolar phototransistors}
- H10F 39/197: {Bipolar transistor image sensors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.

## Claims

### Claim 1

A semiconductor device comprising:
(a) an electrode;
(b) an emitter region of a first conductivity type comprising a first emitter region; a second emitter region and a third emitter region, wherein the first and third emitter regions have the same constant energy band gap and the second emitter region sandwiched between the first and the third emitter regions has a wider energy band gap than said first and third emitter regions;
(c) a base region of a second conductivity type having a constant energy band gap adjacent said emitter region on a side of said emitter region opposite to said electrode, wherein said first and third emitter regions and said base region have the same energy band gap; and
(d) a collector region of the first conductivity type adjacent to said base region, wherein a portion of said second emitter region having a thickness sufficient to provide a linear change in energy band gap width different from a non-linear change in energy band gap obtained with a thickness less than 50 .ANG..

### Claim 2 (depends on 1)

A device according to claim 1, wherein the energy band gap width of said second emitter region is widened by broadening a valence band.

### Claim 3 (depends on 1)

A device according to claim 1, wherein said second base region contains silicon atoms and germanium atoms.

### Claim 4 (depends on 1)

A device according to claim 1, wherein said second emitter region is polycrystalline.

### Claim 5 (depends on 1)

A device according to claim 1, wherein said emitter, base and collector regions are each a monocrystalline semiconductor material.

### Claim 6 (depends on 1)

A device according to claim 1, wherein a length of the portion is not greater than a minority carrier diffusion length within said emitter region.

### Claim 7 (depends on 1)

A device according to claim 1, further comprising:
a second base region in which energy band gap width broader than that of said base region and which is arranged at least around said base region adjacent to said collector and said base regions.

### Claim 8 (depends on 1)

A device according to claim 1, wherein said portion of said second emitter region includes silicon atoms and carbon atoms.