# US 5,707,899 A · SOI structure with a deep thin oxide layer prepared by ION implantation at high energy followed by thermal treatment

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- Number: US 5,707,899 A
- Document ID: US5707899A
- Status: Granted
- Kind: A
- Application number: 08/302,091
- Filed: 1994-09-07
- Granted: 1998-01-13
- Earliest claimed: 1992-05-15
- Assignees: Istituto Guido Donegani S.p.A.
- Inventors: Gianfranco Cerofolini; Laura Meda
- Web page: https://patentgrep.com/patent/US5707899A

## CPC

- H10P 30/209: {in silicon to make buried insulating layers}
- H10P 90/1908: {using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 10.sup.15 -10.sup.16 ions/cm.sup.2, thermal treatment at a temperature within the range of 600.degree.-900.degree. C., a second ion implantation at an oxygen fluence within the range of 2.times.10.sup.17 -8.times.10.sup.17 ions/cm.sup.2, and a final thermal treatment at a temperature within the range of 1150.degree.-1400.degree. C.

## Claims

### Claim 1

A process for preparing an SOI structure with a deep thin oxide layer, having a thickness between 80 nm and 150 nm, comprising the following stages in succession:
a first ion implantation at an oxygen fluence within the range of 10.sup.15 -10.sup.16 ions/cm.sup.2 ;
thermal treatment at a temperature within the range of 600.degree.-900.degree. C.;
a second ion implantation at an oxygen fluence within the range of 2.times.10.sup.17 -8.times.10.sup.17 ions/cm.sup.2 ;
final thermal treatment at a temperature within the range of 1150.degree.-1400.degree. C.