# US 5,707,892 A · Method for fabricating a semiconductor laser diode

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- Number: US 5,707,892 A
- Document ID: US5707892A
- Status: Granted
- Kind: A
- Application number: 08/560,714
- Filed: 1995-11-20
- Granted: 1998-01-13
- Earliest claimed: 1994-11-19
- Assignees: LG Electronics Inc.
- Inventors: Tae Kyung Yoo; Meoung Whan Cho; Ju Ok Seo; Shi Jong Leem; Min Soo Noh
- Web page: https://patentgrep.com/patent/US5707892A

## CPC

- H01S 5/227: Buried mesa structure {; Striped active layer}
- H01S 5/164: {with window regions comprising semiconductor material with a wider bandgap than the active layer}
- H01S 5/22: having a ridge or stripe structure
- H01S 5/2275: {mesa created by etching}
- H01S 2304/06: LPE
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.

## Claims

### Claim 1

A method for fabricating a semiconductor laser diode including a substrate and a double hetero structured semiconductor layer, the method comprising the steps of:
forming the double hetero structured semiconductor layer on the substrate;
forming a dielectric layer on the double hetero structured semiconductor layer;
selectively removing the dielectric layer to expose a portion of the double hetero structured semiconductor layer;
selectively etching the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching; and
regrowing a semiconductor layer on the etched portion by liquid phase epitaxy.

### Claim 2 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, further comprising the steps of:
removing the dielectric layer; and
scribing and breaking the regrown semiconductor layer.

### Claim 3 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the step of forming the double hetero structure includes the steps of:
growing a first clad layer of a first conductivity type on the substrate;
growing an active layer on the first clad layer of the first conductivity type; and
growing a second clad layer of a second conductivity type on the active layer.

### Claim 4 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the removed portion of the dielectric layer corresponds to a mirror plane diode.

### Claim 5 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the removed portion of the dielectric layer is a channel portion for forming a current confining layer to confine a laser diode current of the active layer in a horizontal direction.

### Claim 6 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the removed portion of the dielectric layer corresponds to a channel portion for forming a current confining layer which confines a mirror plane and the active layer in the horizontal direction.

### Claim 7 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the regrown semiconductor layer has a lower refractive index and a higher energy gap than the active layer.

### Claim 8 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the regrown semiconductor layer includes a transparent mirror layer.

### Claim 9 (depends on 1)

The method for fabricating a semiconductor laser diode according to claim 1, wherein the regrown semiconductor layer includes a clad layer.

### Claim 10

A method for fabricating a semiconductor laser diode including a substrate, a first clad layer, an active layer and a second clad layer, the method comprising the steps of:
growing the first clad layer on the substrate;
growing the active layer on the first clad layer;
growing the second clad layer on the active layer;
forming a dielectric layer on the second clad layer;
selectively removing the dielectric layer to expose a portion of the second clad layer;
selectively removing the first clad layer, the active layer, and the second clad layer by liquid phase etching using the dielectric layer as a mask; and
regrowing a semiconductor layer on the removed portion by liquid phase epitaxy.

### Claim 11 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, further comprising the steps of:
removing the dielectric layer; and
scribing and breaking the regrown semiconductor layer.

### Claim 12 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the first clad layer is formed of a first conductivity type, and the second clad layer is formed of a second conductivity type.

### Claim 13 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the removed portion of the dielectric layer corresponds to a mirror plane.

### Claim 14 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the removed portion of the dielectric layer is a channel portion for forming a current confining layer to confine a laser diode current of the active layer in a horizontal direction.

### Claim 15 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the removed portion of the dielectric layer corresponds to a channel portion for forming a current confining layer which confines a mirror plane and the active layer in the horizontal direction.

### Claim 16 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the regrown semiconductor layer has a lower refractive index and a higher energy gap than the active layer.

### Claim 17 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the regrown semiconductor layer includes a transparent mirror layer.

### Claim 18 (depends on 10)

The method for fabricating a semiconductor laser diode according to claim 10, wherein the regrown semiconductor layer includes a clad layer.