Method of manufacturing a light emitting diode

A light emitting diode system for emitting red and green light comprising:

• a mounting surface;
• a GaP green light emitting diode, mounted on said mounting surface, said GaP green light emitting diode including,
• a first semi-conductor substrate of n-type,
• a first monocrystalline epitaxial layer of n-type formed on said first semi-conductor substrate by bringing said first semi-conductor substrate into contact with a growth solution at a first high temperature and thereafter lowering the temperature,
• a second monocrystalline epitaxial layer of p-type formed on said first epitaxial layer by further lowering the above temperature and then cutting off said growth solution to form an epitaxial wafer, and
• a third monocrystalline epitaxial layer of p-type formed on said epitaxial layer by causing the growth solution to contact said second epitaxial layer of said epitaxial wafer at a second high temperature so that said third epitaxial layer forms a base for mounting said GaP green light emitting diode on said mounting surface;
• and
• a GaAlAs red light emitting diode, mounted on said mounting surface, wherein a p-n junction height of said GaAlAs red light emitting diode is matched to a p-n junction height of said GaP green light emitting diode and said second monocrystalline epitaxial layer of p-type has a thickness of greater than 35 .mu.m.

A light emitting diode system for emitting red and green light comprising:

• a mounting surface;
• a GaP green light emitting diode, mounted on said mounting surface, said GaP green light emitting diode including,
• a first semi-conductor substrate of n-type,
• a first monocrystalline epitaxial layer of n-type formed on said first semi-conductor substrate by bringing said first semi-conductor substrate into contact with a first growth solution at a first high temperature and thereafter lowering the temperature,
• a second monocrystalline epitaxial layer of p-type formed on said first epitaxial layer by further lowering the above temperature and then cutting off the first growth solution to form an epitaxial wafer, and
• a third monocrystalline epitaxial layer of p-type formed on said epitaxial layer by causing a second growth solution to contact said second epitaxial layer of said epitaxial wafer at a second high temperature so that said third epitaxial layer forms a base for mounting said GaP green light emitting diode on said mounting surface;
• wherein a p-n junction of said GaP green light emitting diode is located at a boundary of said first monocrystalline epitaxial layer of n-type and said second monocrystalline epitaxial layer of p-type and said second monocrystalline epitaxial layer of p-type has a thickness of greater than 35 .mu.m;
• and
• a GaAlAs red light emitting diode having a p-n junction, mounted on said mounting surface.

A light emitting diode system for emitting red and green light comprising:

• a mounting surface;
• a GaP green light emitting diode, mounted on said mounting surface, said GaP green light emitting diode including,
• a first semi-conductor substrate of n-type,
• a first monocrystalline epitaxial layer of n-type formed on said first semi-conductor substrate by bringing said first semi-conductor substrate into contact with a growth solution at a first high temperature and thereafter lowering the temperature,
• a second monocrystalline epitaxial layer of p-type formed on said first epitaxial layer by further lowering the above temperature and then cutting off said growth solution to form an epitaxial wafer, and
• a third monocrystalline epitaxial layer of p-type formed on said epitaxial layer by causing the growth solution to contact said second epitaxial layer of said epitaxial wafer at a second high temperature so that said third epitaxial layer forms a base for mounting said GaP green light emitting diode on said mounting surface;
• and
• a GaAlAs red light emitting diode, mounted on said mounting surface, wherein a p-n junction of said GaAlAs red light emitting diode is 40 .mu.m lower to 20 .mu.m higher than a p-n junction of said GaP green light emitting diode and said second monocrystalline epitaxial layer of p-type has a thickness of greater than 35 .mu.m.

A light emitting diode system for emitting red and green light comprising:

• a mounting surface;
• a GaP green light emitting diode, mounted on said mounting surface, said GaP green light emitting diode including,
• a first semi-conductor substrate of n-type,
• a first monocrystalline epitaxial layer of n-type formed on said first semi-conductor substrate by bringing said first semi-conductor substrate into contact with a growth solution at a first high temperature and thereafter lowering the temperature,
• a second monocrystalline epitaxial layer of p-type formed on said first epitaxial layer by further lowering the above temperature and then cutting off said growth solution to form an epitaxial wafer, and
• a third monocrystalline epitaxial layer of p-type formed on said epitaxial layer by causing the growth solution to contact said second epitaxial layer of said epitaxial wafer at a second high temperature so that said third epitaxial layer forms a base for mounting said GaP green light emitting diode on said mounting surface;
• and
• a GaAlAs red light emitting diode, mounted on said mounting surface, wherein a p-n junction of said GaP green light emitting diode is 40 .mu.m lower to 20 .mu.m higher than a p-n junction of said GaAlAs red light emitting diode and said second monocrystalline epitaxial layer of p-type has a thickness of greater than 35 .mu.m.