# US 5,707,888 A · Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,707,888 A
- Document ID: US5707888A
- Status: Granted
- Kind: A
- Application number: 08/434,674
- Filed: 1995-05-04
- Granted: 1998-01-13
- Earliest claimed: 1995-05-04
- Assignees: LSI Logic Corporation
- Inventors: Sheldon Aronowitz; James Kimball
- Web page: https://patentgrep.com/patent/US5707888A

## CPC

- H10P 14/6309: {of silicon in uncombined form, i.e. pure silicon}
- H10P 14/6322: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)}
- H10P 14/6502: {of treatments performed before formation of the materials}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/208: {of electrically inactive species}
- H10W 10/0125: {comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- Y10S 438/911: Differential oxidation and etching
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A process and resulting product is described for forming an oxide in a semiconductor substrate which comprises initially implanting the substrate with atoms of a noble gas, then oxidizing the implanted substrate at a reduced temperature, e.g., less than 900.degree. C., to form oxide in the implanted region of the substrate, and then etching the oxidized substrate to remove a portion of the oxide. The resulting oxidation produces a dual layer of oxide in the substrate. The upper layer is an extremely porous and frothy layer of oxide, while the lower layer is a more dense oxide. The upper porous layer of oxide can be selectively removed from the substrate by a mild etch, leaving the more dense oxide layer in the substrate. Further oxide can then be formed adjacent the dense layer of oxide in the substrate, either by oxide deposition over the dense oxide or by growing further oxide beneath the dense oxide layer. The initial oxide formed by the process appears to be temperature independent, at temperatures of 900.degree. C. or less, with oxide formation apparently dependent upon the extent of the implanted regions of the substrate, rather than upon temperature, resulting in thermal savings. Furthermore, the excess implanted noble gas in the substrate adjacent the oxide formed therein can have beneficial effects in inhibiting the formation of parasitic field transistors and in greater control over field thresholds.

## Claims

### Claim 1

A process for forming dual layers of oxide comprising a dense oxide layer and a porous oxide layer on a semiconductor substrate which comprises:
a) implanting said substrate with a noble gas:
1) to an equivalent dosage level range of from 5.times.10.sup.14 ions/cm.sup.2 to less than 8.5.times.10.sup.16 ions/cm.sup.2 ; and
2) using an equivalent energy level of less than about 150 KeV; said dosage level range and said energy level of said noble gas implantation being sufficient to provide a doped region in said substrate which will oxidize to form said dual layers of oxide comprising a lower dense oxide layer and an upper porous oxide layer upon subsequent oxidation of said implanted substrate;
b) oxidizing said implanted substrate to form said dual layers of oxide; and
c) etching said oxidized substrate to remove said upper porous oxide layer.

### Claim 2 (depends on 1)

The process of claim 1 including the further step of masking said substrate prior to said implantation step.

### Claim 3 (depends on 2)

The process of claim 2 wherein said step of implanting said substrate with a noble gas further comprises implanting an equivalent dosage level of noble gas ions not exceeding about 8.times.10.sup.16 ions/cm.sup.2 at an equivalent energy level not exceeding 140 KeV.

### Claim 4 (depends on 3)

The process of claim 3 wherein said step of implanting said substrate with a noble gas further comprises implanting an equivalent dosage level of noble gas ions not exceeding about 7.times.10.sup.16 ions/cm.sup.2 at an equivalent energy level not exceeding 120 KeV.

### Claim 5 (depends on 4)

The process of claim 4 wherein said step of implanting said substrate with a noble gas further comprises implanting an equivalent dosage level of noble gas ions not exceeding about 6.times.10.sup.16 ions/cm.sup.2 at an equivalent energy level not exceeding 100 KeV.

### Claim 6 (depends on 2)

The process of claim 2 wherein said step of implanting said substrate with a noble gas further comprises implanting a noble gas selected from the group consisting of neon, argon, krypton, and xenon.

### Claim 7 (depends on 6)

The process of claim 6 wherein said step of implanting said substrate with a noble gas further comprises implanting said substrate with argon.

### Claim 8 (depends on 1)

The process of claim 1 wherein said step of oxidizing said implanted substrate further comprises oxidizing said substrate in a wet atmosphere.

### Claim 9 (depends on 8)

The process of claim 8 wherein said step of oxidizing said implanted substrate further comprises oxidizing said substrate in steam.

### Claim 10 (depends on 9)

The process of claim 9 wherein said step of oxidizing said implanted substrate in steam further comprises oxidizing said substrate in steam at a temperature of at least about 750.degree. C.

### Claim 11 (depends on 1)

The process of claim 1 wherein said step of etching said substrate to remove a portion of said oxide further comprises dry etching said substrate to remove a portion of said oxide.

### Claim 12 (depends on 1)

The process of claim 1 wherein said step of etching said substrate to remove a portion of said oxide further comprises wet etching said substrate to remove a portion of said oxide.

### Claim 13 (depends on 1)

The process of claim 1 wherein said step of oxidizing said implanted substrate further comprises forming two layers of oxide in said substrate; and said step of etching said oxidized substrate to remove a portion of said oxide further comprises etching said oxidized substrate to remove substantially all of the upper layer of said oxide.

### Claim 14 (depends on 13)

The process of claim 13 wherein said step of oxidizing said implanted substrate to form two layers of oxide in said substrate further comprises forming a lower layer of dense oxide and an upper layer of less dense oxide over said layer of dense oxide; and said step of etching said oxidized substrate to remove a portion of said oxide further comprises etching said oxidized substrate to remove substantially all of said less dense upper layer of oxide.

### Claim 15 (depends on 14)

The process of claim 14 wherein said process comprises the further step of forming additional oxide adjacent said dense oxide layer remaining in said substrate after said etching step.

### Claim 16 (depends on 15)

The process of claim 15 wherein said step of forming additional oxide on said substrate adjacent said dense oxide layer after said etching step comprises growing additional oxide on said substrate by exposing said substrate to a wet atmosphere.

### Claim 17 (depends on 15)

The process of claim 15 wherein said step of forming additional oxide on said substrate adjacent said dense oxide layer after said etching step comprises depositing additional oxide on said dense oxide layer on said substrate.

### Claim 18 (depends on 17)

The process of claim 17 wherein said substrate is silicon and said step of depositing additional oxide on said substrate over said dense oxide layer after said etching step further comprises depositing additional oxide on said substrate using tetraethylorthosilicate (TEOS) and a source of oxygen.

### Claim 19

A low temperature process for forming isolation oxide on a semiconductor substrate by forming dual layers of oxide on said substrate comprising a lower dense oxide layer and an upper porous oxide layer which comprises:
a) masking said substrate;
b) implanting unmasked portions of said substrate with a noble gas:
i) selected from the group consisting of neon, argon, krypton, and xenon;
ii) at a dosage equivalent to an argon implantation dosage within a range of from about 8.times.10.sup.16 ions/cm.sup.2 to about 5.times.10.sup.14 ions/cm.sub.2 ; and
iii) at an energy level equivalent to an argon implantation energy level at least sufficient to provide a doped region in said substrate capable of subsequently oxidizing to form said dual layers of oxide, but not exceeding about 140 KeV;
said dosage level range and said energy level of said noble gas implantation being sufficient to provide a doped region in said substrate capable of oxidizing at a temperature not exceeding 900.degree. C. to form said dual layers of oxide comprising said lower dense oxide layer and said upper porous oxide layer upon subsequent oxidation of said implanted substrate;
c) then oxidizing said implanted substrate in a wet atmosphere of steam at a temperature of at least about 750.degree. C. to about 900.degree. C.;
d) then etching said oxidized substrate to remove a portion of said oxide; and
e) then optionally forming a further layer of oxide contiguous with said remaining lower dense layer of oxide to form said isolation oxide.

### Claim 20 (depends on 19)

The process of claim 19 wherein said step of oxidizing said implanted substrate further comprises forming two layers of oxide in said substrate; and said step of etching said oxidized substrate to remove a portion of said oxide further comprises etching said oxidized substrate to remove substantially all of the upper layer of said oxide.

### Claim 21 (depends on 20)

The process of claim 20 wherein said step of oxidizing said implanted substrate to form two layers of oxide in said substrate further comprises forming a lower layer of dense oxide and an upper layer of less dense oxide over said layer of dense oxide; and said step of etching said oxidized substrate to remove a portion of said oxide further comprises etching said oxidized substrate to remove substantially all of said less dense upper layer of oxide.

### Claim 22 (depends on 21)

The process of claim 21 wherein said process comprises the further step of forming additional oxide on said substrate adjacent said dense oxide layer after said etching step.

### Claim 23 (depends on 22)

The process of claim 22 wherein said step of forming additional oxide on said substrate adjacent said dense oxide layer after said etching step comprises growing additional oxide on said substrate by exposing said substrate to a wet atmosphere.

### Claim 24 (depends on 22)

The process of claim 22 wherein said step of forming additional oxide on said substrate adjacent said dense oxide layer after said etching step comprises depositing additional oxide on said dense oxide layer on said substrate.