# US 5,707,886 A · Process for providing electrostatic discharge protection to an integrated circuit output pad

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- Number: US 5,707,886 A
- Document ID: US5707886A
- Status: Granted
- Kind: A
- Application number: 08/712,896
- Filed: 1996-09-12
- Granted: 1998-01-13
- Earliest claimed: 1994-01-12
- Assignees: LSI Logic Corporation
- Inventors: Rosario Consiglio; Gina M. Sparacino
- Web page: https://patentgrep.com/patent/US5707886A

## CPC

- H03K 19/00315: {in field-effect transistor circuits}
- H02H 9/046: {responsive to excess voltage appearing at terminals of integrated circuits}
- H10D 89/601: {for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs}
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H02H: EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS (indicating or signalling undesired working conditions G01R, e.g. G01R31/00, G08B; locating faults along lines G01R31/08; emergency protective devices H01H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An integrated circuit structure with input/output gate voltage regulation and parasitic zener and junction diodes for protection against damage resulting from electrostatic discharge (ESD) events. The circuit includes a first protective FET connected between an input/output pad and a ground potential of the integrated circuit. A diode voltage regulator is also connected between the gate of the first protective FET and a reference potential of the integrated circuit. The first protective FET receives a voltage from its gate-drain overlap capacitance during an ESD event. The diode is operative during an ESD event to provide a sufficient voltage to the first FET gate to permit a desired ESD current flow through the first protective FET. In one embodiment the first FET is an NMOS device and the diode voltage regulator is a series of p-n forward biased diodes.

## Claims

### Claim 1

A process of providing electrostatic discharge protection to an integrated circuit output pad, comprising the steps of:
forming an operative NMOS YET in a P-well on a P-type substrate, said operative NMOS FET having a drain electrically connected to said pad, a source electrically connected to a ground potential of said integrated circuit, and a gate for receiving a logic signal internal to said integrated circuit;
forming an operative PMOS FET in a N-well on said P-type substrate, said operative PMOS FET having a drain electrically connected to said pad, a source electrically connected to a voltage supply potential of said integrated circuit, and a gate for receiving a logic signal internal to said integrated circuit;
forming a P-type field implant within a P-well on said P-type substrate; and
electrically connecting a P+ region within said P-type field implant to said ground potential of said integrated circuit, such that a parasitic conductive path is formed from said pad to said ground potential, said parasitic conductive path including a parasitic PN junction diode and a parasitic Zener diode, said junction diode having an anode electrically connected to a cathode of said Zener diode, said Zener diode having an anode electrically connected to said ground potential.

### Claim 2 (depends on 1)

The process of claim 1 further including the steps of:
forming a first protective NMOS FET in a P-well on said P-type substrate, said first protective FET having a drain electrically connected to said ground potential, and a gate, and forming a diode voltage regulator between said gate of said first protective FET and said ground potential.

### Claim 3 (depends on 2)

The process of claim 2 wherein said step of forming a diode voltage regulator includes forming a plurality of adjacent N-wells on said P-type substrate, each of said N-wells having a P+ region and an N+ region formed therein, each of said P+ regions making up the anode of a diode and each of said N+ regions making up the cathode of a diode, and interconnecting said anodes and cathodes of said diodes such that diodes are connected in series between said gate of said first protective transistor and said ground potential of said integrated circuit.

### Claim 4 (depends on 3)

The process of claim 3 further including the step of forming a resistor by forming two N+ regions in a N-well on said P substrate, each of said N+ regions making up a terminal of an N-well resistor, one of said terminals of said N-well resistor electrically connected to said gate of said first protective transistor, and another of said terminals electrically connected to said ground potential of said integrated circuit.

### Claim 5 (depends on 3)

The process of claim 3 further including the step of forming a second protective NMOS FET in a P-well on said P-type substrate, said second protective FET having a drain electrically connected to said gate of said first protective transistor, a source electrically connected to said ground potential, and a gate electrically connected to said pad and said drain of said first protective transistor.

### Claim 6 (depends on 1)

The process of claim 1 further including the steps of:
forming a first protective NMOS FET in a P-well on said P-type substrate, said first protective NMOS FET having a drain electrically connected to said pad, a source electrically connected to said ground potential, and a gate electrically connected to said ground potential; and
forming a second protective NMOS FET in a P-well on said P-type substrate, said second protective NMOS FET having a drain electrically connected to said pad, a source electrically connected to said ground potential, and a gate electrically connected to said pad.