# US 5,707,882 A · Semiconductor device for display device using thin film transistors and process of manufacturing the same

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- Number: US 5,707,882 A
- Document ID: US5707882A
- Status: Granted
- Kind: A
- Application number: 08/376,795
- Filed: 1995-01-23
- Granted: 1998-01-13
- Earliest claimed: 1994-01-26
- Assignees: Sanyo Electric Co., Ltd.
- Inventors: Hiroki Hamada; Kiichi Hirano; Nobuhiro Gouda; Hisashi Abe; Eiji Taguchi; Nobuhiko Oda; Yoshihiro Morimoto
- Web page: https://patentgrep.com/patent/US5707882A

## CPC

- H10P 14/24: using chemical vapour deposition [CVD]
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3258: {Crystal orientation}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3456: {Polycrystalline}
- H10P 14/3466: {Crystal orientation}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P 14/3808: {using laser beams}
- G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

## Claims

### Claim 1

A method of manufacturing a semiconductor device having a single polycrystalline layer comprising plurality of polycrystalline silicon films, said polycrystalline layer having a selected field effect mobility, said method comprising the steps of:
forming a first of said plurality of polycrystalline silicon films on an insulation substrate;
forming an amorphous silicon film on said first polycrystalline silicon film;
forming a second of said plurality of polycrystalline silicon films from said amorphous silicon film, by subjecting said amorphous silicon film to one of a solid phase growth and a recrystallization process; and
controlling said steps of forming said first and second polycrystalline silicon films to obtain said selected field effect mobility of said single polycrystalline layer by varying a ratio of thickness of said first polycrystalline silicon film to thickness of said second polycrystalline silicon film.

### Claim 2 (depends on 1)

The method according to claim 1, wherein said first polycrystalline silicon film is produced by one of a Chemical Vapor Deposition (CVD) process and a Physical Vapor Deposition (PVD) process, whereby the crystal orientation of first polycrystalline silicon film is different from that of said second polycrystalline silicon film.

### Claim 3 (depends on 2)

The method according to claim 2, wherein said first polycrystalline silicon film is produced by a thermal CVD process in which the temperature of said insulation substrate is set in the range of 660.degree. C. to 680.degree. C. in order to differentiate crystal orientation of said first polycrystalline silicon film from crystal orientation of said second polycrystalline silicon film.

### Claim 4 (depends on 1)

The method according to claim 1 further comprising the step of forming silicon oxide on a portion of the surface of said first polycrystalline silicon film before the formation of said amorphous silicon film.

### Claim 5

A method of manufacturing a thin film transistor, said transistor comprising a single polycrystalline layer, said layer having a selected field effect mobility, said method comprising the steps of:
forming a first polycrystalline silicon film on an insulation substrate;
forming an amorphous silicon film on said first polycrystalline silicon film;
forming a second polycrystalline silicon film from said amorphous silicon film, by subjecting said amorphous silicon film to one of a solid phase growth and a recrystallization process, whereby said single polycrystalline layer comprises both said first polycrystalline silicon film and said second polycrystalline silicon film;
controlling said steps of forming said first and second polycrystalline silicon films to obtain said selected field effect mobility of said single polycrystalline layer by varying a ratio of thickness of said first polycrystalline silicon film to thickness of said second polycrystalline silicon film;
forming a gate insulation layer on said second polycrystalline silicon film;
forming a gate electrode on said gate insulation layer; and
forming source and drain regions at positions adjacent to said gate electrode in said first and second polycrystalline silicon films.

### Claim 6 (depends on 5)

The method according to claim 5, wherein said first polycrystalline silicon film is produced by one of a CVD process and a FVD process, whereby the Crystal orientation of said first polycrystalline silicon film is different from that of said second polycrystalline silicon film.

### Claim 7 (depends on 5)

The method according to claim 5, wherein the step of forming said first polycrystalline silicon film includes the steps of:
forming an amorphous silicon film on said insulation substrate; and
forming said first polycrystalline silicon film from said amorphous silicon film, by subjecting the amorphous silicon to one of a solid phase growth and a recrystallization process,
whereby the crystal orientation of the first polycrystalline silicon film is the same as that of said second polycrystalline silicon film.

### Claim 8 (depends on 5)

The method according to claim 5 further comprising the steps of:
forming an interlayer insulation film on an entire surface of the transistor device after the formation of said gate electrode on said gate insulation layer;
forming a contact hole on said interlayer insulation film to expose said source and drain regions; and
providing a source electrode connecting said source region and a drain electrode connecting said drain region.

### Claim 9

A method of manufacturing an integral driver type display device in which a pixel portion and a pixel driving circuit are provided on an insulation substrate, said method comprising the steps of:
forming a first polycrystalline silicon film on the insulation substrate in such a manner that the thickness of the silicon film in the area associated with the pixel portion is thicker than the thickness of the silicon film in the area associated with the pixel driving circuit;
forming an amorphous silicon film on said first polycrystalline silicon film; and
forming a second polycrystalline silicon film from said amorphous silicon film, by subjecting the amorphous silicon to one of a solid phase growth and a recrystallization process.

### Claim 10 (depends on 9)

The method according to claim 9, wherein said first polycrystalline silicon film is produced by one of a CVD process and a PVD process, whereby the crystal orientation of the first polycrystalline silicon film is different from that of said second polycrystalline silicon film.

### Claim 11 (depends on 9)

The method according to claim 9, wherein the step of forming said first polycrystalline silicon film includes the steps of:
forming an amorphous silicon film on said insulation substrate in such a manner that the thickness of the amorphous silicon film in the area associated with the pixel portion is thicker than the thickness of the amorphous silicon film in the area associated with the pixel driving circuit; and
forming said first polycrystalline silicon film from said amorphous silicon film, by subjecting the amorphous silicon to one of a solid phase growth and a recrystallization process,
whereby the crystal orientation of the first polycrystalline silicon film is the same as that of said second polycrystalline silicon film.

### Claim 12 (depends on 9)

The method according to claim 9 further comprising the step of forming a thin film transistor in which at least one of said first and second polycrystalline silicon film is used as an active layer.

### Claim 13 (depends on 9)

The method according to claim 9 further comprising the step of forming silicon oxide on a portion of the surface of said first polycrystalline silicon film before the formation of said second amorphous silicon film.