# US 5,707,784 A · Method of forming chemically amplified resist pattern and manufacturing for semiconductor device by using the chemically amplified resist pattern > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,707,784 A - Document ID: US5707784A - Status: Granted - Kind: A - Application number: 08/567,210 - Filed: 1995-12-05 - Granted: 1998-01-13 - Earliest claimed: 1992-09-16 - Assignees: Fujitsu Limited; Nippon Zeon Co., Ltd. - Inventors: Akira Oikawa; Hiroyuki Tanaka; Masayuki Oie; Hideyuki Tanaka; Nobunori Abe - Web page: https://patentgrep.com/patent/US5707784A ## CPC - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F 7/2006: {using coherent light; using polarised light} - G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance. ## Claims ### Claim 1 A method of forming a chemically amplified resist pattern comprising the steps of: applying a chemically amplified resist to a layer to be patterned; protecting the chemically amplified resist against reaction with ambient alkaline impurities by coating surface thereof with an amorphous polyolefin substance having hydrophobicity; heating said chemically amplified resist and said amorphous polyolefin substance together; forming a latent image pattern in said chemically amplified resist by exposing said chemically amplified resist to ionizing radiation which transmits through said amorphous polyolefin substance; removing said amorphous polyolefin substance; subjecting the chemically amplified resist to heat treatment either after said latent image pattern is formed or after said amorphous polyolefin substance is removed; and making the latent image pattern visible by developing said chemically amplified resist. ### Claim 2 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein said chemically amplified resist is heated before said amorphous polyolefin substance is coated thereon at a heating temperature which is equal to or higher than the temperature of heating said chemically amplified resist and said amorphous polyolefin substance together. ### Claim 3 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein said amorphous polyolefin substance comprises a material that is either a polymer or a copolymer of any of alkenes, cycloalkenes, alkadienes, and cycloalkadienes. ### Claim 4 (depends on 3) A method of forming a chemically amplified resist pattern according to claim 3, wherein said material comprises a hydrogenated polymer or copolymer, a halide of a polymer or copolymer, or a cyanide of a polymer or copolymer. ### Claim 5 (depends on 3) A method of forming a chemically amplified resist pattern according to claim 3, wherein said material is a hydrogenated open-circle cycloalkene polymer, an addition polymer of a cycloalkene and an alkene, or an addition polymer of cycloalkene and an .alpha.-olefin. ### Claim 6 (depends on 3) A method of forming a chemically amplified resist pattern according to claim 3, wherein said material is a hydrogenated copolymer of methyltetracyclododecene and methylnorbornene. ### Claim 7 (depends on 3) A method of forming a chemically amplified resist pattern according to claim 3, wherein said material is a copolymer of methylnorbornene and ethylene. ### Claim 8 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein a solvent is used for removing said amorphous polyolefin substance, and said solvent comprises n-hexane, cyclohexane, n-heptane, methylcyclohexane, n-octane, isooctane, n-decane, decalin, or ligroin. ### Claim 9 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein a solvent is used for removing said amorphous polyolefin substance, and said solvent comprises benzene, toluene, xylene, ethylbenzene, isopropylbenzene or diethylbenzene. ### Claim 10 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein a solvent is, used for removing said amorphous polyolefin substance, and said solvent substance comprises carbon tetrachloride, chloroform, trichloroethane, chlorobenzene or dichlorobenzene. ### Claim 11 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein a solvent is used for removing said amorphous polyolefin substance, and said solvent comprises tetrahydrofuran, ethylether, butylether, anisole or isopropylether. ### Claim 12 (depends on 1) A method of forming a chemically amplified resist pattern according to claim 1, wherein a solvent is used for removing said amorphous polyolefin substance, and said solvent comprises perfluoropentane, perfluorohexane or triperfluorobutylamine. ### Claim 13 A process for manufacturing a semiconductor device using a chemically amplified resist pattern comprising the steps of: applying a chemically amplified resist on a layer to be patterned; protecting the chemically amplified resist against reaction with ambient alkaline impurities by coating a surface thereof with a liquid amorphous polyolefin substance having hydrophobicity; heating said chemically amplified resist and said amorphous polyolefin substance together; forming a latent image pattern in said chemically amplified resist by exposing said chemically amplified resist to ionizing radiation which transmits through said amorphous polyolefin substance; forming a pattern of said chemically amplified resist by developing said chemically amplified resist after removing said amorphous polyolefin substance; and forming a pattern of the layer to be patterned using the chemically amplified resist pattern as a mask.